Temperature dependence of microwave resistances of n++np++ Si X band IMPATT diode

2007 ◽  
Vol 7 (3) ◽  
pp. 274-280 ◽  
Author(s):  
P. De
2002 ◽  
Vol 81 (21) ◽  
pp. 3984-3986 ◽  
Author(s):  
G. Yu. Rudko ◽  
I. A. Buyanova ◽  
W. M. Chen ◽  
H. P. Xin ◽  
C. W. Tu

1980 ◽  
Author(s):  
Thomas Chen-Chou Ho ◽  
Shiang Fu
Keyword(s):  

RSC Advances ◽  
2015 ◽  
Vol 5 (105) ◽  
pp. 86656-86664 ◽  
Author(s):  
Hongyu Wang ◽  
Dongmei Zhu ◽  
Wancheng Zhou ◽  
Fa Luo

The maximum reflection loss value of polyimide/Ti3SiC2 composites is up to −48.6 dB at 8.5 GHz with a thickness of 2.9 mm and the absorption bandwidth below −10 dB is 3.8 GHz.


2021 ◽  
Vol 14 (4) ◽  
pp. 046501
Author(s):  
Seiya Kawasaki ◽  
Yuto Ando ◽  
Manato Deki ◽  
Hirotaka Watanabe ◽  
Atsushi Tanaka ◽  
...  

1962 ◽  
Vol 17 (2) ◽  
pp. 155-158 ◽  
Author(s):  
Jürgen Schneider ◽  
Subhas Ranjan Sircar

The paramagnetic resonance of manganese doped silver chloride single crystals has been observed at X-band frequencies over a wide range of temperature. At 77 °K the spectrum is that corresponding to a Mn++-ion associated with a nearest silver vacancy in a fixed position. At elevated temperatures, the angle dependent lines of the spectrum broaden out. due to the enhancement of jumping motion of the vacancies. From the temperature dependence of those lines, the activation energy for the motion of a silver vacancy bound to the Mn++-ion was found to be 0.30 ± 0.05 eV.


1973 ◽  
Vol 41 (2) ◽  
pp. 224-229 ◽  
Author(s):  
R. D. Hogg
Keyword(s):  
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