Effect of the resistance-area product on the temperature increase of nanopillar for spin torque magnetic memory

2010 ◽  
Vol 10 (2) ◽  
pp. 659-663 ◽  
Author(s):  
Seung-Seok Ha ◽  
Kyung-Jin Lee ◽  
Chun-Yeol You
Keyword(s):  
Temperature Increase ◽  
Magnetic Memory ◽  
Spin Torque ◽  
Area Product

scholarly journals Magnified Damping Under Rashba Spin–Orbit Coupling

SPIN ◽  
2016 ◽  
Vol 06 (01) ◽  
pp. 1650002
Author(s):  
Seng Ghee Tan ◽  
Mansoor B. A. Jalil
Keyword(s):  
Orbit Coupling ◽  
Magnetic Memory ◽  
Spin Torque ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Local Magnetization ◽  
First Order ◽  
Damping Effect ◽  
Rashba Spin ◽  
Spin Torques

The spin–orbit coupling spin torque consists of the field-like [S. G. Tan et al., arXiv:0705.3502 (2007).] and the damping-like terms [H. Kurebayashi et al., Nat. Nanotechnol. 9, 211 (2014).] that have been widely studied for applications in magnetic memory. We focus, in this paper, not on the spin–orbit effect producing the above spin torques, but on its magnifying the damping constant of all field-like spin torques. As first-order precession leads to second-order damping, the Rashba constant is naturally co-opted, producing a magnified field-like damping effect. The Landau–Liftshitz–Gilbert equations are written separately for the local magnetization and the itinerant spin, allowing the progression of magnetization to be self-consistently locked to the spin.

High-speed Magnetic Memory based on Spin-Torque Domain Wall Motion

2009 ◽  
Author(s):  
N. Ishiwata ◽  
S. Fukami ◽  
T. Suzuki ◽  
K. Nagahara ◽  
N. Ohshima ◽  
...  
Keyword(s):  
Domain Wall ◽  
High Speed ◽  
Wall Motion ◽  
Domain Wall Motion ◽  
Magnetic Memory ◽  
Spin Torque

scholarly journals Spin Torque Oscillator for High Performance Magnetic Memory

2015 ◽  
Vol 20 (1) ◽  
pp. 77
Author(s):  
Rachid Sbiaa ◽  
Khaled Bouziane
Keyword(s):  
High Performance ◽  
Perpendicular Magnetic Anisotropy ◽  
Magnetic Tunnel Junction ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Magnetic Memory ◽  
Spin Torque ◽  
Free Layer ◽  
Switching Current ◽  
Thermal Stability Of

A study on spin transfer torque switching in a magnetic tunnel junction with perpendicular magnetic anisotropy is presented. The switching current can be strongly reduced under a spin torque oscillator (STO), and its use in addition to the conventional transport in magnetic tunnel junctions (MTJ) should be considered. The reduction of the switching current from the parallel state to the antiparallel state is greater than in  the opposite direction, thus minimizing the asymmetry of the resistance versus current in the hysteresis loop. This reduction of both switching current and asymmetry under a spin torque oscillator occurs only during the writing process and does not affect the thermal stability of the free layer.

High speed in spin-torque-based magnetic memory using magnetic nanocontacts

2013 ◽  
Vol 7 (5) ◽  
pp. 332-335 ◽  
Author(s):  
R. Sbiaa ◽  
S. N. Piramanayagam ◽  
T. Liew
Keyword(s):  
High Speed ◽  
Magnetic Memory ◽  
Spin Torque

Magnetic Memory

2009 ◽  
Author(s):  
Denny D. Tang ◽  
Yuan-Jen Lee
Keyword(s):  
Magnetic Memory
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