Abstract
To achieve a desirable magnitude of spin-orbit torque (SOT) switching and realise multifunctional spin logic and memory devices utilising SOT, controlling the SOT manipulation is vitally important. In conventional SOT bilayer systems, researchers have tried to control the switching behaviour via interfacial oxidisation; however, the switching efficiency is limited by the interface quality. A current-induced effective magnetic field in a single layer of a ferromagnet with strong spin-orbit interactions, the so-called spin-orbit ferromagnet, can be utilised to induce SOT. In spin-orbit ferromagnet systems, electric field application has potential for manipulating the spin-orbit interactions via carrier concentration modulation. In this work, we demonstrate that SOT switching can be successfully controlled via an external electric field using a (Ga,Mn)As single layer. By applying a gate voltage, the switching current density can be solidly and reversibly manipulated with a large ratio of 14.5%, which is ascribed to the successful modulation of the interfacial electric field. Our findings help further the understanding of the magnetisation switching mechanism and advance the development of gate-controlled SOT devices.