Early oxidation stages of germanium substrate in the graphene/Ge(001) system

Carbon ◽  
2019 ◽  
Vol 149 ◽  
pp. 290-296 ◽  
Author(s):  
P. Dabrowski ◽  
M. Rogala ◽  
I. Pasternak ◽  
P. Krukowski ◽  
J.M. Baranowski ◽  
...  
2017 ◽  
Vol 87 (3-4) ◽  
pp. 311-319 ◽  
Author(s):  
Jerzy Jedliński ◽  
Jean Luc Grosseau Poussard ◽  
Jarosław Dąbek ◽  
Brian Gleeson ◽  
Marek Nocuń ◽  
...  

2007 ◽  
Vol 46 (No. 16) ◽  
pp. L376-L378 ◽  
Author(s):  
Jaeyeol Song ◽  
Kuniyuki Kakushima ◽  
Parhat Ahmet ◽  
Kazuo Tsutsui ◽  
Nobuyuki Sugii ◽  
...  

2008 ◽  
Vol 92 (16) ◽  
pp. 163505 ◽  
Author(s):  
Ruilong Xie ◽  
Mingbin Yu ◽  
Mei Ying Lai ◽  
Lap Chan ◽  
Chunxiang Zhu

2005 ◽  
Vol 44 (No. 45) ◽  
pp. L1389-L1391 ◽  
Author(s):  
Qingchun Zhang ◽  
Nan Wu ◽  
Thomas Osipowicz ◽  
Lakshmi Kanta Bera ◽  
Chunxiang Zhu

2017 ◽  
Vol 24 (02) ◽  
pp. 1750014 ◽  
Author(s):  
Y. CHENG ◽  
Y. M. LU ◽  
Y. L. GUO ◽  
G. J. HUANG ◽  
S. Y. WANG ◽  
...  

Multilayer diamond-like carbon film with germanium buffer layers, which was composed of several thick DLC layers and thin germanium island “layers” and named as Ge-DLC film, was prepared on the germanium substrate by ultraviolet laser. The Ge-DLC film had almost same surface roughness as the pure DLC film. Hardness of the Ge-DLC film was above 48.1[Formula: see text]GPa, which was almost the same as that of pure DLC film. Meanwhile, compared to the pure DLC film, the critical load of Ge-DLC film on the germanium substrate increased from 81.6[Formula: see text]mN to 143.8[Formula: see text]mN. Moreover, Ge-DLC film on germanium substrates had no change after fastness tests. The results showed that Ge-DLC film not only kept high hardness but also had higher critical load than that of pure DLC film. Therefore, it could be used as practical protective films.


2010 ◽  
Vol 168-169 ◽  
pp. 313-316
Author(s):  
I.V. Fedorchenko ◽  
A. Rumiantsev ◽  
T. Kuprijanova ◽  
L. Kilanski ◽  
R.A. Szymczak ◽  
...  

The heterostructure ferromagnetic/semiconductor ZnSiAs2<Mn>/Si was obtained by using the Si-ZnAs2 phase diagram. The magnetic properties of Zn1-XMnXSiAs2 bulk crystals and ferromagnetic layered heterostructures were similar. The same method was used for preparing a ferromagnetic layer ZnGeAs2<Mn> on a germanium substrate.


1996 ◽  
Vol 103 (2) ◽  
pp. 205-216 ◽  
Author(s):  
J. Jedliński ◽  
A. Glazkov ◽  
M. Konopka ◽  
G. Borchardt ◽  
E. Tscherkasova ◽  
...  

AIP Advances ◽  
2018 ◽  
Vol 8 (4) ◽  
pp. 045214 ◽  
Author(s):  
Yinbo Sun ◽  
Miao Zhang ◽  
Linxi Dong ◽  
Gaofeng Wang ◽  
Xiaoming Xie ◽  
...  

2015 ◽  
Vol 54 (20) ◽  
pp. 6313 ◽  
Author(s):  
Tatiana Grulois ◽  
Guillaume Druart ◽  
Hervé Sauer ◽  
Mathieu Chambon ◽  
Nicolas Guérineau ◽  
...  

1997 ◽  
Vol 71 (20) ◽  
pp. 2984-2986 ◽  
Author(s):  
J. P. Zanatta ◽  
P. Duvaut ◽  
P. Ferret ◽  
A. Million ◽  
G. Destefanis ◽  
...  

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