Fabrication of single-crystal silicon micro pillars on copper foils by nanosecond pulsed laser irradiation

CIRP Annals ◽  
2017 ◽  
Vol 66 (1) ◽  
pp. 253-256 ◽  
Author(s):  
Jiwang Yan ◽  
Jun Noguchi ◽  
Yoshitake Terashi
Keyword(s):  
Single Crystal ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Copper Foils ◽  
Nanosecond Pulsed Laser ◽  
Micro Pillars ◽  
Pulsed Laser Irradiation

Oxidation Effects During the Formation of Buried Sb Dopant Profiles in Silicon Using Pulsed Laser Epitaxy

1991 ◽  
Vol 235 ◽  
Author(s):  
Randall J. Carolissen ◽  
R. Pretorius
Keyword(s):  
Single Crystal ◽  
Laser Irradiation ◽  
Oxidation Kinetics ◽  
Ruby Laser ◽  
Pulsed Laser ◽  
Single Crystal Silicon ◽  
Heating Time ◽  
No Oxidation ◽  
Crystal Silicon ◽  
Oxygen Concentrations

ABSTRACTSevere oxidation inhibited epitaxy when buried Sb profiles in single crystal silicon were formed from evaporated layers irradiated in atmosphere with a pulsed Q-switched ruby laser. Oxygen concentrations as high as 5×1017atoms/cm2 (equivalent to 105nm SiO2) were measured. However, structures prepared without the Sb layer and irradiated under identical conditions, showed no oxidation. Oxidation of Sb as a source of the measured oxygen was ruled out, while the total heating time during laser irradiation is so short (nano- to milliseconds) that normal oxidation kinetics cannot account for the amount of SiO2 measured. Irradiations in vacuum and in a helium ambient showed that the oxygen responsible for these effects is supplied from the ambient in which irradiations are carried out. Also no oxidation was observed when structures, prepared on a substrate heated to 350°C, were irradiated in atmosphere. A model to account for these oxidation effects is proposed.

scholarly journals Nanosecond Pulsed Laser Processing of Ion Implanted Single Crystal Silicon Carbide Thin Layers

2014 ◽  
Vol 56 ◽  
pp. 933-943 ◽  
Author(s):  
Tuğrul Özel ◽  
Thanongsak Thepsonthi ◽  
Voshadhi P. Amarasinghe ◽  
George K. Celler
Keyword(s):  
Silicon Carbide ◽  
Single Crystal ◽  
Laser Processing ◽  
Pulsed Laser ◽  
Single Crystal Silicon ◽  
Thin Layers ◽  
Crystal Silicon ◽  
Nanosecond Pulsed Laser ◽  
Pulsed Laser Processing ◽  
Ion Implanted

scholarly journals Magnetic Properties on FeAl Stripes and Dots Induced by Nanosecond Pulsed Laser Irradiation

2014 ◽  
Vol 38 (4) ◽  
pp. 157-161 ◽  
Author(s):  
H. Kaiju ◽  
Y. Yoshida ◽  
S. Watanabe ◽  
K. Kondo ◽  
A. Ishibashi ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Nanosecond Pulsed Laser ◽  
Pulsed Laser Irradiation

Nanosecond pulsed laser irradiation of titanium: Oxide growth and effects on underlying metal

2014 ◽  
Vol 248 ◽  
pp. 38-45 ◽  
Author(s):  
D.P. Adams ◽  
R.D. Murphy ◽  
D.J. Saiz ◽  
D.A. Hirschfeld ◽  
M.A. Rodriguez ◽  
...  
Keyword(s):  
Laser Irradiation ◽  
Titanium Oxide ◽  
Pulsed Laser ◽  
Oxide Growth ◽  
Nanosecond Pulsed Laser ◽  
Pulsed Laser Irradiation

Increase of bone volume by a nanosecond pulsed laser irradiation is caused by a decreased osteoclast number and an activated osteoblasts

Bone ◽  
2007 ◽  
Vol 40 (1) ◽  
pp. 140-148 ◽  
Author(s):  
Tadashi Ninomiya ◽  
Akihiro Hosoya ◽  
Hiroaki Nakamura ◽  
Kazuo Sano ◽  
Tsuyoshi Nishisaka ◽  
...  
Keyword(s):  
Laser Irradiation ◽  
Pulsed Laser ◽  
Bone Volume ◽  
Osteoclast Number ◽  
Nanosecond Pulsed Laser ◽  
Pulsed Laser Irradiation
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