Oxidation Effects During the Formation of Buried Sb Dopant Profiles in Silicon Using Pulsed Laser Epitaxy

1991 ◽  
Vol 235 ◽  
Author(s):  
Randall J. Carolissen ◽  
R. Pretorius
Keyword(s):  
Single Crystal ◽  
Laser Irradiation ◽  
Oxidation Kinetics ◽  
Ruby Laser ◽  
Pulsed Laser ◽  
Single Crystal Silicon ◽  
Heating Time ◽  
No Oxidation ◽  
Crystal Silicon ◽  
Oxygen Concentrations

ABSTRACTSevere oxidation inhibited epitaxy when buried Sb profiles in single crystal silicon were formed from evaporated layers irradiated in atmosphere with a pulsed Q-switched ruby laser. Oxygen concentrations as high as 5×1017atoms/cm2 (equivalent to 105nm SiO2) were measured. However, structures prepared without the Sb layer and irradiated under identical conditions, showed no oxidation. Oxidation of Sb as a source of the measured oxygen was ruled out, while the total heating time during laser irradiation is so short (nano- to milliseconds) that normal oxidation kinetics cannot account for the amount of SiO2 measured. Irradiations in vacuum and in a helium ambient showed that the oxygen responsible for these effects is supplied from the ambient in which irradiations are carried out. Also no oxidation was observed when structures, prepared on a substrate heated to 350°C, were irradiated in atmosphere. A model to account for these oxidation effects is proposed.

Pulsed Laser Annealing of Aluminum

1980 ◽  
Vol 1 ◽  
Author(s):  
W. R. Wampler ◽  
D. M. Follstaedt ◽  
P. S. Peercy
Keyword(s):  
Single Crystal ◽  
Laser Irradiation ◽  
Reasonable Agreement ◽  
Ruby Laser ◽  
Laser Annealing ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Nucleation Time ◽  
Pulsed Laser Annealing ◽  
Beam Analysis

ABSTRACTPulsed ruby laser irradiation of unimplanted single crystal and implanted polycrystalline Al has been studied with ion beam analysis and TEM. The results show that Al is melted to a depth of ∼ 0.9 μm with a 4.2 J/cm2 , 15 nsec pulse, and that vacancies are quenched into Al during resolidification. Diffusion of Zn in liquid Al is observed, and a melt time of ∼ 65 nsec is estimated for a 3.8 J/cm2, 30 nsec pulse. The observations are in reasonable agreement with calculations of sample temperature and melt times. We observe no precipitation of AlSb in liquid Al for Sbimplanted Al, and conclude that the nucleation time satisfies 50 nsec ≲ tnuc ≲ 200 nsec. We find no evidence for amorphous Al after irradiation of single crystal Al with energies ≳ 1.5 J/cm2.

Order-Disorder Transition in Single-Crystal Silicon Induced by Pulsed uv Laser Irradiation

1979 ◽  
Vol 42 (20) ◽  
pp. 1356-1358 ◽  
Author(s):  
Raphael Tsu ◽  
Rodney T. Hodgson ◽  
Teh Yu Tan ◽  
John E. Baglin
Keyword(s):  
Single Crystal ◽  
Laser Irradiation ◽  
Single Crystal Silicon ◽  
Uv Laser ◽  
Crystal Silicon ◽  
Disorder Transition

Raman Scattering Characterization of Bonding Defects in Silicon

1980 ◽  
Vol 2 ◽  
Author(s):  
Raphael Tsu
Keyword(s):  
Energy Density ◽  
Raman Scattering ◽  
Single Crystal ◽  
Pulsed Laser ◽  
Single Crystal Silicon ◽  
Raman Peak ◽  
Crystal Silicon ◽  
Amorphous Si ◽  
Phonon Structure

ABSTRACTRaman scattering is used for the characterization of defects in Si. Damage is produced in single crystal silicon by ion-implantation of As and Si. The phonon structure of the damaged layer is that of the typical amorphous Si. After irradiation by pulsed laser(10ns,532nm) at energy density of approximately 0.1J/cm2, a Raman peak appears at a frequency between 508 cm−1 and 517 cm−1 depending on implant dosage. The higher the implant dosage, the lower is the frequency. We explain this in terms of the residual bonding defects caused by the presence of extraneous atoms such as oxygen. On the other hand, irradiation at an energy density in excess of 0.5 J/cm2, a Raman peak appears at a frequency close to that of the single crystal except for small shifts due to Fano-shift. For implant dosage in excess of 4×1016 As/cm2 , we have found additional peaks at 222 cm−1 and 267 cm−1 which are close to the metallic arsenic modes indicating the presence of arsenic clusters.

scholarly journals Nanosecond Pulsed Laser Processing of Ion Implanted Single Crystal Silicon Carbide Thin Layers

2014 ◽  
Vol 56 ◽  
pp. 933-943 ◽  
Author(s):  
Tuğrul Özel ◽  
Thanongsak Thepsonthi ◽  
Voshadhi P. Amarasinghe ◽  
George K. Celler
Keyword(s):  
Silicon Carbide ◽  
Single Crystal ◽  
Laser Processing ◽  
Pulsed Laser ◽  
Single Crystal Silicon ◽  
Thin Layers ◽  
Crystal Silicon ◽  
Nanosecond Pulsed Laser ◽  
Pulsed Laser Processing ◽  
Ion Implanted

Formation of buried Sb dopant profiles in silicon by pulsed laser epitaxy

1993 ◽  
Vol 8 (4) ◽  
pp. 841-846
Author(s):  
R.J. Carolissen ◽  
D.K. Knoesen ◽  
W.C. Sinke ◽  
R. Pretorius
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Single Crystal Silicon ◽  
No Oxidation ◽  
Surface Layers ◽  
Crystal Silicon ◽  
State Diffusion ◽  
Degree Of Oxidation ◽  
Minimum Yield ◽  
Dopant Profiles

In this investigation buried Sb dopant profiles in single crystal silicon have been formed from evaporated layers using laser annealing. For irradiations carried out in air, severe oxidation of the surface layers inhibited epitaxy. Oxygen concentrations as high as 5 × 1017 atoms/cm2 (equivalent to about 105 nm SiO2) were measured. It was found that both the thin (less than 3 nm) Sb layer and the free volume in the a-Si, deposited by evaporation onto a cold substrate, need to be present for this degree of oxidation to take place. However, when silicon was evaporated onto a substrate heated to 350 °C, dense packing of the silicon atoms was obtained and even for irradiations in air good epitaxy (minimum yield of 7%) and no oxidation occurred. To form buried Sb profiles, laser energies only slightly higher than the threshold for epitaxy were used to prevent excessive spreading due to an increase in liquid state diffusion obtained at higher energies. Under these conditions the width of the buried Sb profile was typically about 120 nm, and up to 90% of the Sb atoms were found to occupy lattice sites.

Oxidation Kinetics of Hexagonal-Shaped Single-Crystal Silicon Whiskers

2004 ◽  
Vol 82 (10) ◽  
pp. 2791-2795
Author(s):  
Honggang Jiang ◽  
Yuntian T. Zhu ◽  
Darryl P. Butt
Keyword(s):  
Single Crystal ◽  
Oxidation Kinetics ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Kinetics Of

Nanostructuring of single-crystal silicon carbide by femtosecond laser irradiation in a liquid

2014 ◽  
Vol 22 (1) ◽  
pp. 15-18 ◽  
Author(s):  
E. V. Barmina ◽  
A. A. Serkov ◽  
G. A. Shafeev ◽  
E. Stratakis ◽  
C. Fotakis
Keyword(s):  
Silicon Carbide ◽  
Femtosecond Laser ◽  
Single Crystal ◽  
Laser Irradiation ◽  
Single Crystal Silicon ◽  
Femtosecond Laser Irradiation ◽  
Crystal Silicon
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