Effect of coherent twin boundary and stacking fault on deformation behaviors of copper nanowires

2015 ◽  
Vol 104 ◽  
pp. 46-51 ◽  
Author(s):  
H.Y. Song ◽  
Y. Sun
Keyword(s):  
Twin Boundary ◽  
Stacking Fault ◽  
Copper Nanowires ◽  
Coherent Twin Boundary ◽  
Deformation Behaviors

Stacking fault propagation from a coherent twin boundary

1972 ◽  
Vol 26 (5) ◽  
pp. 1081-1087 ◽  
Author(s):  
T. Malis ◽  
D. J. Lloyd ◽  
K. Tangri
Keyword(s):  
Twin Boundary ◽  
Stacking Fault ◽  
Coherent Twin Boundary ◽  
Fault Propagation

Lattice defect identification using convergent-beam electron diffraction

1992 ◽  
Vol 50 (2) ◽  
pp. 1180-1181
Author(s):  
Michiyoshi Tanaka ◽  
Masami Terauchi ◽  
Tohsikatsu Kaneyama
Keyword(s):  
Electron Diffraction ◽  
Twin Boundary ◽  
Convergent Beam Electron Diffraction ◽  
Stacking Fault ◽  
Lattice Defects ◽  
Image Method ◽  
Great Success ◽  
Coherent Twin Boundary ◽  
Beam Electron ◽  
Convergent Beam

Electron microscopy has made a great success in the identification of lattice defects. Convergent-beam electron diffraction (CBED) also allows us to identify them and CBED gives more information about lattice defects than the electron- microscope-image method. Lattice defects are divided into two basic types. One causes a phase shift at the defect and the other an angular change. The stacking fault is a typical example of the former type and the coherent twin boundary, of the latter type. The dislocation can be treated as an extension of the former type. CBED can determine the displacement vector of a stacking fault, the Burgers vector of a dislocation and the orientation difference at a coherent twin boundary reliably and easily. We will explain the methods to determine them using examples. STACKING FAULTS : Rocking curves obtained from a stacking fault are different from those of a perfect region in a manner characteristic of the displacement between two crystals at the fault.

Atomic and Electronic Structure Analysis of Σ=3, 9 and 27 Boundary, and Multiple Junction in β-SiC

1999 ◽  
Vol 589 ◽  
Author(s):  
K. Tanaka ◽  
M. Kohyama
Keyword(s):  
Electronic Structure ◽  
Energy Loss ◽  
Twin Boundary ◽  
Structural Unit ◽  
High Resolution Electron Microscopy ◽  
Coherent Twin Boundary ◽  
Atomic Structures ◽  
Resolution Electron ◽  
Electron Energy Loss ◽  
Atomic And Electronic Structure

AbstractThe atomic structures of σ=3, 9 and 27 boundaries, and multiple junctions in β-SiC were studied by high-resolution electron microscopy (HREM). Especially, the existence of the variety of structures of σ=3 incoherent twin boundaries and σ=27 boundary was shown by HREM. The structures of σ=3, 9 and 27 boundary were explained by structural unit models. Electron energy-loss spectroscopy (EELS) was used to investigate the electronic structure of grain boundaries. The spectra recorded from bulk, {111}σ=3 coherent twin boundary (CTB) and {1211}σ=3 incoherent twin boundary (ITB) did not show significant differences. Especially, the energy-loss corresponding to carbon 1s-to Φ* transition was not found. It indicates that C atoms exist at grain boundary on the similar condition of bulk

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