Atomic and Electronic Structure Analysis of Σ=3, 9 and 27 Boundary, and Multiple Junction in β-SiC

1999 ◽  
Vol 589 ◽  
Author(s):  
K. Tanaka ◽  
M. Kohyama

AbstractThe atomic structures of σ=3, 9 and 27 boundaries, and multiple junctions in β-SiC were studied by high-resolution electron microscopy (HREM). Especially, the existence of the variety of structures of σ=3 incoherent twin boundaries and σ=27 boundary was shown by HREM. The structures of σ=3, 9 and 27 boundary were explained by structural unit models. Electron energy-loss spectroscopy (EELS) was used to investigate the electronic structure of grain boundaries. The spectra recorded from bulk, {111}σ=3 coherent twin boundary (CTB) and {1211}σ=3 incoherent twin boundary (ITB) did not show significant differences. Especially, the energy-loss corresponding to carbon 1s-to Φ* transition was not found. It indicates that C atoms exist at grain boundary on the similar condition of bulk

2009 ◽  
Vol 1204 ◽  
Author(s):  
Raed A. Alduhaileb ◽  
Virginia M. Ayres ◽  
Benjamin W. Jacobs ◽  
Xudong Fan ◽  
Kaylee McElroy ◽  
...  

AbstractThe evolution of carbon onion structure from spherical to polyhedral is correlated with changes in the sp3/sp2 ratio as a function of increasing synthesis temperature using electron energy loss spectroscopy, scanning electron microscopy, and high resolution electron microscopy. Results that are obtained using asymmetric f-variance versus symmetric Gaussian deconvolution of electron energy loss spectra are compared. The possibility of a separate peak at 287 eV is discussed.


1995 ◽  
Vol 416 ◽  
Author(s):  
Y. Zhang ◽  
H. Ichinose ◽  
Y. Ishida ◽  
K. Ito ◽  
M. Nakanose

ABSTRACTHigh resolution electron microscopy and electron energy-loss spectrometry were used to investigate both atomic and electronic structures of grain boundaries in diamond thin films grown by chemical vapor deposition. The atomic structures of {112}σ3 and {114}σ9 <110= tilt boundaries in diamond show different features from those in other diamond structure semiconductors. The electron energy-loss spectra recorded from the grain boundary regions show extra intensity near the energy-loss corresponding to carbon 1s-to-π*; transition, as compared to the spectra recorded from neighboring crystalline regions. This gives the evidence that the dangling bonds are not fully reconstructed along <110= direction in the boundary structure. Atomic models are constructed for these boundaries with the presence of non-tetracoordinated atoms. The stability of the boundary structure is explained by the π-like bonding between the nontetracoordinated atoms.


2002 ◽  
Vol 746 ◽  
Author(s):  
J.-L. Maurice ◽  
F. Pailloux ◽  
D. Imhoff ◽  
J.-P. Contour ◽  
A. Barthélémy ◽  
...  

ABSTRACTWe use High Resolution Electron Microscopy together with Electron Energy Loss Spectroscopy to analyze the crystallography and the chemical configuration of a Co/SrTiO3 interface in a Co/SrTiO3/La2/3Sr1/3MnO3 magnetic tunnel junction.PACS: 75.47.-m, 75.70.Cn, 68.37.Lp, 79.20.Uv


1996 ◽  
Vol 466 ◽  
Author(s):  
J. C. Yang ◽  
E. Schumann ◽  
I. Levin ◽  
H. Muellejans ◽  
M. Ruhle

ABSTRACTThe transient oxidation stage of single crystal (001)NiAl was investigated using scanning electron microscopy, transmission electron microscopy, electron diffraction, high resolution electron microscopy and electron energy loss spectroscopy (EELS). (001)NiAl was oxidized in air at 950°C in order to produce transient forms of alumina on the surface. After oxidation, an oxide scale with plate-like surface morphology formed. We found that the main transient alumina polymorph is γ-Al2O3. The platelets which formed on the surface of the oxide are most likely α-A12O3, not θ-Al2O3. Randomly-oriented α-Al2O3 grains were observed at the oxide/metal interface. The NiAl/γ-Al2O3 interfaces were examined with EELS. From the changes observed in the electron energy loss spectra, the interfacial terminating plane is determined. Lattice matching arguments are given to explain why these terminating planes are energetically favorable.


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