Effects of vertical strain and electric field on the electronic properties and interface contact of graphene/InP vdW heterostructure

2021 ◽  
Vol 198 ◽  
pp. 110677
Author(s):  
Xuefeng Lu ◽  
Lingxia Li ◽  
Xin Guo ◽  
Junqiang Ren ◽  
Hongtao Xue ◽  
...  
2019 ◽  
Vol 716 ◽  
pp. 155-161 ◽  
Author(s):  
Khang D. Pham ◽  
Nguyen N. Hieu ◽  
Le M. Bui ◽  
Huynh V. Phuc ◽  
Bui D. Hoi ◽  
...  

2020 ◽  
Vol 22 (14) ◽  
pp. 7412-7420 ◽  
Author(s):  
Kourosh Rahimi

The promising g-ZnO/1T-TiS2 vdW heterostructure with tunable bandgap and band alignment type under biaxial strain and electric field was proposed.


2020 ◽  
Vol 22 (9) ◽  
pp. 4946-4956 ◽  
Author(s):  
Wenyu Guo ◽  
Xun Ge ◽  
Shoutian Sun ◽  
Yiqun Xie ◽  
Xiang Ye

The structural, mechanical and electronic properties of the MoSSe/WSSe van der Waals (vdW) heterostructure under various degrees of horizontal and vertical strain are systematically investigated based on first-principles methods.


2019 ◽  
Vol 730 ◽  
pp. 277-282 ◽  
Author(s):  
Yusheng Wang ◽  
Nahong Song ◽  
Xiaohui Yang ◽  
Jing Zhang ◽  
Bin Xu ◽  
...  

RSC Advances ◽  
2021 ◽  
Vol 11 (35) ◽  
pp. 21824-21831
Author(s):  
X. Q. Deng ◽  
R. Q. Sheng ◽  
Q. Jing

The CBM (VBM) of the heterostructure is mainly contributed by the BAs (arsenene), which will favor the separation of photogenerated electron–hole pairs.


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