scholarly journals High temperature oxidation of IN 718 manufactured by laser beam melting and electron beam melting: Effect of surface topography

2018 ◽  
Vol 141 ◽  
pp. 127-145 ◽  
Author(s):  
Tom Sanviemvongsak ◽  
Daniel Monceau ◽  
Bruno Macquaire
Keyword(s):  
Electron Beam ◽  
High Temperature ◽  
Laser Beam ◽  
Surface Topography ◽  
Electron Beam Melting ◽  
High Temperature Oxidation ◽  
Temperature Oxidation ◽  
Laser Beam Melting ◽  
Melting Effect ◽  
Effect Of Surface

High temperature oxidation behavior of electron beam smelted K417 superalloy

Vacuum ◽  
2019 ◽  
Vol 170 ◽  
pp. 108979 ◽  
Author(s):  
Longhai Zhao ◽  
Yi Tan ◽  
Shuang Shi ◽  
Xinpeng Zhuang ◽  
Shaoqiang Niu ◽  
...  
Keyword(s):  
Electron Beam ◽  
High Temperature ◽  
High Temperature Oxidation ◽  
Oxidation Behavior ◽  
Temperature Oxidation ◽  
High Temperature Oxidation Behavior

scholarly journals Effect of Surface Finish on High-Temperature Oxidation of Steels in CO2, Supercritical CO2, and Air

2019 ◽  
Vol 92 (5-6) ◽  
pp. 525-540 ◽  
Author(s):  
Richard P. Oleksak ◽  
Gordon R. Holcomb ◽  
Casey S. Carney ◽  
Lucas Teeter ◽  
Ömer N. Doğan
Keyword(s):  
High Temperature ◽  
Surface Finish ◽  
Supercritical Co2 ◽  
High Temperature Oxidation ◽  
Temperature Oxidation ◽  
Effect Of Surface

Effect of Electron Beam Injection on the Removal of Metal Impurities in Silicon

2012 ◽  
Vol 531 ◽  
pp. 55-58
Author(s):  
Yi Tan ◽  
Da Yu Pang ◽  
Shu Ang Shi ◽  
Wei Dong ◽  
Rui Xun Zou ◽  
...  
Keyword(s):  
Electron Beam ◽  
High Temperature ◽  
Inductively Coupled Plasma ◽  
High Temperature Oxidation ◽  
Silicon Particle ◽  
Particle Morphology ◽  
Temperature Oxidation ◽  
Beam Injection ◽  
Metal Impurities ◽  
Silicon Particles

Electron beam injection(EBI) is a process of gathering the electrons in materials using electron beam(EB). The EBI technology is proposed for purification of silicon particles by removing metal impurities through high-temperature oxidation, EBI, and HF acid washing processes. Analysis of silicon particle morphology after high-temperature oxidation using digital camera and after EBI using scanning electron microscope(SEM) were conducted. Then, the composition of silicon particles was analyzed using inductively coupled plasma(ICP). The silicon particle colours turned bright after EBI; therefore, EBI can change the thickness of SiO2 films in addition to increasing the temperature of the silicon particles. The results show that this technology is effective in removing metal impurities in silicon particles.

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