Identifying rims along nano-sized clusters as catalytically active sites – The case of CuOx/silica model catalysts nanofabricated by electron beam lithography

2012 ◽  
Vol 544 ◽  
pp. 70-72 ◽  
Author(s):  
A. Chakradhar ◽  
J. Shan ◽  
M.R. Komarneni ◽  
M. Lu ◽  
U. Burghaus
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Active Sites ◽  
Model Catalysts ◽  
Catalytically Active

New model catalysts: uniform platinum cluster arrays produced by electron beam lithography

1996 ◽  
Vol 37 (3-4) ◽  
pp. 131-136 ◽  
Author(s):  
P. W. Jacobs ◽  
F. H. Ribeiro ◽  
G. A. Somorjai ◽  
S. J. Wind
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Model Catalysts ◽  
New Model ◽  
Platinum Cluster

Model Catalysts Fabricated Using Electron Beam Lithography and Pulsed Laser Deposition

1997 ◽  
Vol 101 (48) ◽  
pp. 9973-9977 ◽  
Author(s):  
Aaron S. Eppler ◽  
Günther Rupprechter ◽  
László Guczi ◽  
Gabor A. Somorjai
Keyword(s):  
Electron Beam ◽  
Pulsed Laser Deposition ◽  
Electron Beam Lithography ◽  
Pulsed Laser ◽  
Model Catalysts ◽  
Laser Deposition

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

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