Layer number dependence of carrier lifetime in graphenes observed using time-resolved mid-infrared luminescence

2015 ◽  
Vol 637 ◽  
pp. 58-62 ◽  
Author(s):  
Hiroshi Watanabe ◽  
Tomohiro Kawasaki ◽  
Takushi Iimori ◽  
Fumio Komori ◽  
Tohru Suemoto
Keyword(s):  
Carrier Lifetime ◽  
Time Resolved ◽  
Mid Infrared ◽  
Layer Number ◽  
Infrared Luminescence

Mid-infrared luminescence of dysprosium-doped gallium-antimony-sulfur-iodine chalcohalide glasses and fibers

2021 ◽  
Vol 560 ◽  
pp. 120718
Author(s):  
Mingyang Sun ◽  
Anping Yang ◽  
He Ren ◽  
Sisheng Qi ◽  
Huixing Lin ◽  
...  
Keyword(s):  
Mid Infrared ◽  
Infrared Luminescence ◽  
Chalcohalide Glasses

Dirac Surface Plasmons in Photoexcited Bismuth Telluride Nanowires : Optical Pump-Terahertz Probe Spectroscopy

Nanoscale ◽  
2021 ◽  
Author(s):  
Mithun K P ◽  
Srabani Kar ◽  
Abinash Kumar ◽  
Victor Suvisesha Muthu Dharmaraj ◽  
Ravishankar Narayanan ◽  
...  
Keyword(s):  
Surface Plasmons ◽  
Bismuth Telluride ◽  
Topological Insulators ◽  
Collective Excitation ◽  
Optical Pump ◽  
Time Resolved ◽  
Mid Infrared ◽  
Plasmonic Materials ◽  
Probe Spectroscopy

Collective excitation of Dirac plasmons in graphene and topological insulators have opened new possibilities of tunable plasmonic materials ranging from THz to mid-infrared regions. Using time resolved Optical Pump -...

scholarly journals Two - Color Mid-Infrared Spectroscopy of Isoelectronic Centers in Silicon

2003 ◽  
Vol 770 ◽  
Author(s):  
N.Q. Vinh ◽  
T. Gregorkiewicz
Keyword(s):  
Excited States ◽  
Free Electron ◽  
Free Electron Laser ◽  
Materials Science ◽  
Time Resolved ◽  
Mid Infrared ◽  
Semiconductor Physics ◽  
Open Questions ◽  
Time Resolved Photoluminescence ◽  
Tunable Source

AbstractOne of the open questions in semiconductor physics is the origin of the small splittings of the excited states of bound excitons in silicon. A free electron laser as a tunable source of the mid-infrared radiation (MIR) can be used to investigate such splittings of the excited states of optical centers created by transition metal dopants in silicon. In the current study, the photoluminescence from silver and copper doped silicon is investigated by two color spectroscopy in the visible and the MIR. It is shown the PL due recombination of exciton bound to Ag and Cu is quenched upon application of the MIR beam. The time-resolved photoluminescence measurements and the quenching effects of these bands are presented. By scanning the wavelength of the free-electron laser ionization spectra of relevant traps involved in photoluminescence are obtained. The formation and dissociation of the bound excitons, and the small splittings of the effective-mass excited states are discussed. The applied experimental method allows correlation of DLTS data on trapping centers to specific channels of radiative recombination. It can be applied for spectroscopic analysis in materials science of semicondutors.

scholarly journals Mid-infrared time-resolved photoconduction in black phosphorus

2D Materials ◽  
2016 ◽  
Vol 3 (4) ◽  
pp. 041006 ◽  
Author(s):  
Ryan J Suess ◽  
Edward Leong ◽  
Joseph L Garrett ◽  
Tong Zhou ◽  
Reza Salem ◽  
...  
Keyword(s):  
Black Phosphorus ◽  
Time Resolved ◽  
Mid Infrared

Time-resolved mid-Infrared dual-comb absorption and dispersion spectroscopy of methane and ethane: towards plasma applications

2021 ◽  
Author(s):  
Muhammad Ali Abbas ◽  
Luuk van Dijk ◽  
Khalil Eslami Jahromi ◽  
Mohammadreza Nematollahi ◽  
Frans J. M. Harren ◽  
...  
Keyword(s):  
Time Resolved ◽  
Mid Infrared ◽  
Absorption And Dispersion ◽  
Plasma Applications

Germanosilicate glasses containing PbSe quantum dots for mid-infrared luminescence

2016 ◽  
Vol 431 ◽  
pp. 79-82 ◽  
Author(s):  
Jing Wang ◽  
Jihong Zhang ◽  
Chao Liu ◽  
Jong Heo ◽  
Yong Kon Kwon
Keyword(s):  
Quantum Dots ◽  
Mid Infrared ◽  
Infrared Luminescence

scholarly journals Влияние условий роста и уровня легирования на кинетику люминесценции слоев Ge : Sb, выращенных на кремнии

2020 ◽  
Vol 54 (7) ◽  
pp. 685
Author(s):  
Д.В. Юрасов ◽  
Н.А. Байдакова ◽  
А.Н. Яблонский ◽  
А.В. Новиков
Keyword(s):  
Doping Level ◽  
Room Temperature ◽  
Carrier Lifetime ◽  
Growth Conditions ◽  
Published Data ◽  
Rapid Thermal Anneal ◽  
Time Resolved ◽  
Light Emitting ◽  
Pl Intensity ◽  
Time Resolved Photoluminescence

Light-emitting properties of Ge-on-Si(001) layers doped by Sb were studied by stationary and time-resolved photoluminescence (PL) at room temperature. It was obtained that the PL intensity of n-Ge/Si(001) structures is maximized when the doping level is close to the equilibrium solubility of Sb in Ge (~1019 cm-3) which is in accordance with the previously published data. Time-resolved studies of the direct-related PL signal have shown that both the donor density and the growth conditions of doped layer, in particular, the growth temperature influence the PL kinetics. It was obtained that the increase of doping level leads to the decrease of the characteristic carrier lifetime. Moreover, usage of low growth temperatures which is needed to form the doped n-Ge layers also results in shortening of the carrier lifetime as compared with Ge layers grown at high temperatures. It was found that rapid thermal anneal at proper conditions could partially compensate the above mentioned detrimental effects and lead to the increase of both the PL intensity and carrier lifetime.

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