scholarly journals Influence of the Front Surface Passivation Quality on Large Area n-Type Silicon Solar Cells with Al-Alloyed Rear Emitter

2011 ◽  
Vol 8 ◽  
pp. 487-492 ◽  
Author(s):  
F. Book ◽  
T. Wiedenmann ◽  
G. Schubert ◽  
H. Plagwitz ◽  
G. Hahn
Keyword(s):  
Solar Cells ◽  
Surface Passivation ◽  
Front Surface ◽  
Silicon Solar Cells ◽  
Large Area ◽  
Type Silicon

The investigation on the front surface field of aluminum rear emitter N-type silicon solar cells

Solar Energy ◽  
2015 ◽  
Vol 114 ◽  
pp. 198-205 ◽  
Author(s):  
Xi Xi ◽  
Xiaojing Chen ◽  
Song Zhang ◽  
Wenjia Li ◽  
Zhengrong Shi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Front Surface ◽  
Silicon Solar Cells ◽  
Type Silicon ◽  
Surface Field ◽  
Front Surface Field

Wet Chemical Oxidation of Silicon Surfaces Prior to the Deposition of All-PECVD AlOx/a-SiNx Passivation Stacks for Silicon Solar Cells

2012 ◽  
Vol 195 ◽  
pp. 310-313 ◽  
Author(s):  
Abdelazize Laades ◽  
Heike Angermann ◽  
Hans Peter Sperlich ◽  
Uta Stürzebecher ◽  
Carlos Alberto Díaz Álvarez ◽  
...  
Keyword(s):  
Solar Cells ◽  
Surface Passivation ◽  
Chemical Vapor ◽  
Chemical Oxidation ◽  
Silicon Surfaces ◽  
Silicon Solar Cells ◽  
Rear Side ◽  
Type Silicon ◽  
Wet Chemical ◽  
P Type

Aluminum oxide (AlOx) is currently under intensive investigation for use in surface passivation schemes in solar cells. AlOx films contain negative charges and therefore generate an accumulation layer on p-type silicon surfaces, which is very favorable for the rear side of p-type silicon solar cells as well as the p+-emitter at the front side of n-type silicon solar cells. However, it has been reported that quality of an interfacial silicon sub-oxide layer (SiOx), which is usually observed during deposition of AlOx on Silicon, strongly impacts the silicon/AlOx interface passivation properties [1]. The present work demonstrates that a convenient way to control the interface is to form thin wet chemical oxides of high quality prior to the deposition of AlOx/a-SiNx:H stacks by the plasma enhanced chemical vapor deposition (PECVD).

Progress on large area n-type silicon solar cells with front laser doping and a rear emitter

2016 ◽  
Vol 24 (8) ◽  
pp. 1149-1156 ◽  
Author(s):  
Angel Urueña ◽  
Monica Aleman ◽  
Emanuele Cornagliotti ◽  
Aashish Sharma ◽  
Michael Haslinger ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Solar Cells ◽  
Large Area ◽  
Laser Doping ◽  
Type Silicon

scholarly journals In-depth Analysis of Front Surface Passivation Properties for N-type IBC Silicon Solar Cells Using Advanced Simulation

2011 ◽  
Vol 8 ◽  
pp. 141-146
Author(s):  
C. Gong ◽  
K. Van Wichelen ◽  
E. Cornagliotti ◽  
N.E. Posthuma ◽  
J. Poortmans ◽  
...  
Keyword(s):  
Solar Cells ◽  
Surface Passivation ◽  
Front Surface ◽  
Silicon Solar Cells ◽  
Depth Analysis
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