scholarly journals Light-induced Degradation of Silicon Solar Cells with Aluminiumoxide Passivated Rear Side

2015 ◽  
Vol 77 ◽  
pp. 599-606 ◽  
Author(s):  
Karin Krauss ◽  
Fabian Fertig ◽  
Dorothee Menzel ◽  
Stefan Rein
2013 ◽  
Vol 7 (8) ◽  
pp. 530-533 ◽  
Author(s):  
James Bullock ◽  
Andrew Thomson ◽  
Andrés Cuevas ◽  
Boris Veith ◽  
Jan Schmidt ◽  
...  

2017 ◽  
Vol 124 ◽  
pp. 680-690 ◽  
Author(s):  
Andreas Lorenz ◽  
Anna Münzer ◽  
Martin Lehner ◽  
Roland Greutmann ◽  
Heinz Brocker ◽  
...  

2012 ◽  
Vol 195 ◽  
pp. 310-313 ◽  
Author(s):  
Abdelazize Laades ◽  
Heike Angermann ◽  
Hans Peter Sperlich ◽  
Uta Stürzebecher ◽  
Carlos Alberto Díaz Álvarez ◽  
...  

Aluminum oxide (AlOx) is currently under intensive investigation for use in surface passivation schemes in solar cells. AlOx films contain negative charges and therefore generate an accumulation layer on p-type silicon surfaces, which is very favorable for the rear side of p-type silicon solar cells as well as the p+-emitter at the front side of n-type silicon solar cells. However, it has been reported that quality of an interfacial silicon sub-oxide layer (SiOx), which is usually observed during deposition of AlOx on Silicon, strongly impacts the silicon/AlOx interface passivation properties [1]. The present work demonstrates that a convenient way to control the interface is to form thin wet chemical oxides of high quality prior to the deposition of AlOx/a-SiNx:H stacks by the plasma enhanced chemical vapor deposition (PECVD).


2016 ◽  
Author(s):  
Benedikt Bläsi ◽  
Nico Tucher ◽  
Johannes Eisenlohr ◽  
Benjamin G. Lee ◽  
Jan Benick ◽  
...  

2013 ◽  
Vol 3 (3) ◽  
pp. 976-984 ◽  
Author(s):  
Felix Haase ◽  
Sarah Kajari-Schroder ◽  
Udo Romer ◽  
Tobias Neubert ◽  
Jan-Hendrik Petermann ◽  
...  

2013 ◽  
Vol 108 ◽  
pp. 164-169 ◽  
Author(s):  
Benjamin Thaidigsmann ◽  
Christopher Kick ◽  
Andreas Drews ◽  
Florian Clement ◽  
Andreas Wolf ◽  
...  

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