Enhanced rear-side reflection and firing-stable surface passivation of silicon solar cells with capping polymer films

2013 ◽  
Vol 7 (8) ◽  
pp. 530-533 ◽  
Author(s):  
James Bullock ◽  
Andrew Thomson ◽  
Andrés Cuevas ◽  
Boris Veith ◽  
Jan Schmidt ◽  
...  
Keyword(s):  
Solar Cells ◽  
Polymer Films ◽  
Surface Passivation ◽  
Silicon Solar Cells ◽  
Rear Side ◽  
Stable Surface

Wet Chemical Oxidation of Silicon Surfaces Prior to the Deposition of All-PECVD AlOx/a-SiNx Passivation Stacks for Silicon Solar Cells

2012 ◽  
Vol 195 ◽  
pp. 310-313 ◽  
Author(s):  
Abdelazize Laades ◽  
Heike Angermann ◽  
Hans Peter Sperlich ◽  
Uta Stürzebecher ◽  
Carlos Alberto Díaz Álvarez ◽  
...  
Keyword(s):  
Solar Cells ◽  
Surface Passivation ◽  
Chemical Vapor ◽  
Chemical Oxidation ◽  
Silicon Surfaces ◽  
Silicon Solar Cells ◽  
Rear Side ◽  
Type Silicon ◽  
Wet Chemical ◽  
P Type

Aluminum oxide (AlOx) is currently under intensive investigation for use in surface passivation schemes in solar cells. AlOx films contain negative charges and therefore generate an accumulation layer on p-type silicon surfaces, which is very favorable for the rear side of p-type silicon solar cells as well as the p+-emitter at the front side of n-type silicon solar cells. However, it has been reported that quality of an interfacial silicon sub-oxide layer (SiOx), which is usually observed during deposition of AlOx on Silicon, strongly impacts the silicon/AlOx interface passivation properties [1]. The present work demonstrates that a convenient way to control the interface is to form thin wet chemical oxides of high quality prior to the deposition of AlOx/a-SiNx:H stacks by the plasma enhanced chemical vapor deposition (PECVD).

scholarly journals Influence of the Front Surface Passivation Quality on Large Area n-Type Silicon Solar Cells with Al-Alloyed Rear Emitter

2011 ◽  
Vol 8 ◽  
pp. 487-492 ◽  
Author(s):  
F. Book ◽  
T. Wiedenmann ◽  
G. Schubert ◽  
H. Plagwitz ◽  
G. Hahn
Keyword(s):  
Solar Cells ◽  
Surface Passivation ◽  
Front Surface ◽  
Silicon Solar Cells ◽  
Large Area ◽  
Type Silicon

Advances in Surface Passivation Schemes for High Efficiency c-Silicon Solar Cells

2016 ◽  
Vol 16 (10) ◽  
pp. 10659-10664 ◽  
Author(s):  
Nagarajan Balaji ◽  
Cheolmin Park ◽  
Seunghwan Lee ◽  
Youn-Jung Lee ◽  
Junsin Yi
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Surface Passivation ◽  
Silicon Solar Cells

Surface Passivation Materials for High-Efficiency Silicon Solar Cells

2020 ◽  
pp. 413-441
Author(s):  
Shui-Yang Lien ◽  
Chia-Hsun Hsu ◽  
Xiao-Ying Zhang ◽  
Pao-Hsun Huang
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Surface Passivation ◽  
Silicon Solar Cells

scholarly journals Anodic oxidations: Excellent process durability and surface passivation for high efficiency silicon solar cells

2019 ◽  
Vol 203 ◽  
pp. 110155
Author(s):  
N.E. Grant ◽  
T.C. Kho ◽  
K.C. Fong ◽  
E. Franklin ◽  
K.R. McIntosh ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Surface Passivation ◽  
Silicon Solar Cells

scholarly journals Surface Passivation of Boron Emitters on n-Type Silicon Solar Cells

2019 ◽  
Vol 11 (14) ◽  
pp. 3784
Author(s):  
Ji Yeon Hyun ◽  
Soohyun Bae ◽  
Yoon Chung Nam ◽  
Dongkyun Kang ◽  
Sang-Won Lee ◽  
...  
Keyword(s):  
Solar Cells ◽  
Surface Passivation ◽  
Atom Probe ◽  
Silicon Solar Cells ◽  
Capacitance Voltage ◽  
Passivation Layers ◽  
Chemical Passivation ◽  
Electron Energy Loss ◽  
Hydrogenation Effect ◽  
Antireflective Properties

Al2O3/SiNx stack passivation layers are among the most popular layers used for commercial silicon solar cells. In particular, aluminum oxide has a high negative charge, while the SiNx film is known to supply hydrogen as well as impart antireflective properties. Although there are many experimental results that show that the passivation characteristics are lowered by using the stack passivation layer, the cause of the passivation is not yet understood. In this study, we investigated the passivation characteristics of Al2O3/SiNx stack layers. To identify the hydrogenation effect, we analyzed the hydrogen migration with atom probe tomography by comparing the pre-annealing and post-annealing treatments. For chemical passivation, capacitance-voltage measurements were used to confirm the negative fixed charge density due to heat treatment. Moreover, the field-effect passivation was understood by confirming changes in the Al2O3 structure using electron energy-loss spectroscopy.

Low temperature surface passivation for silicon solar cells

1996 ◽  
Vol 40 (4) ◽  
pp. 297-345 ◽  
Author(s):  
C. Leguijt ◽  
P. Lölgen ◽  
J.A. Eikelboom ◽  
A.W. Weeber ◽  
F.M. Schuurmans ◽  
...  
Keyword(s):  
Solar Cells ◽  
Low Temperature ◽  
Surface Passivation ◽  
Silicon Solar Cells ◽  
Temperature Surface
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