Gold atomic contact: Electron conduction in the presence of interfacial charge transfer

2014 ◽  
Vol 47 ◽  
pp. 41-44 ◽  
Author(s):  
Zhao-Bin Chen ◽  
Zheng-Lian Peng ◽  
Jing-Hong Liang ◽  
Xiao-Shun Zhou ◽  
De-Yin Wu ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Interfacial Charge Transfer ◽  
Electron Conduction ◽  
Atomic Contact ◽  
Interfacial Charge

The suppression of spin–orbit coupling effect by the ZnO layer of La0.7Sr0.3MnO3/ZnO heterostructures grown on (001) oriented Si restores the negative magnetoresistance

Nanoscale ◽  
2021 ◽  
Author(s):  
Bibekananda Das ◽  
Prahallad Padhan
Keyword(s):  
Charge Transfer ◽  
Coupling Effect ◽  
Orbit Coupling ◽  
Negative Magnetoresistance ◽  
Magnetic Scattering ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Interfacial Charge Transfer ◽  
Positive Magnetoresistance ◽  
Interfacial Charge

In Si–La0.7Sr0.3MnO3, the interfacial charge transfer driven strong localized antiferromagnetic and spin–orbit couplings favor positive magnetoresistance, which is suppressed by strong magnetic scattering induced by the top ZnO layer results in negative magnetoresistance.

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