In this research, we prepared aluminium (Al)-doped ZnO nanorod arrays on the glass substrate using sonicated sol-gel method. These nanorod arrays were annealed at 500 °C in air and oxygen environment using thermal furnace. Field emission scanning electron microscopy (FESEM) image reveals that nanorod arrays were deposited vertically aligned on the substrate. The stress characteristics of air-annealed and oxygen-annealed Al-doped ZnO nanorod arrays were investigated using Raman spectroscopy and X-ray diffraction (XRD) measurement. The electrical properties of the samples were investigated using two-probe current-voltage (I-V) measurement system. The results show that annealing atmospheres greatly influenced the stress and electrical properties of the nanorod arrays.
The p-type ZnO nanorod arrays were prepared by doping Na with hydrothermal method. The structural, electrical, and optical properties were explored by XRD, Hall-effect, PL, and Raman spectra. The carrier concentrations and the mobility of Na-doped ZnO nanorod arrays are arranged from1.4×1016 cm−3to1.7×1017 cm−3and 0.45 cm2 v−1 s−1to 106 cm2 v−1 s−1, respectively.
Nonstoichiometric Zinc oxide (ZnO) nanorod arrays doped Co or Ni can be easily obtained by calicining soaked ZnO nanorod arrays. More importantly, the nonstoichiometric doped ZnO nanoarrays have more effective antimicrobial than pure ZnO nanoarrays, which means we can obtain a kind of promising new effective functional nanomaterials.
Effect of Na Doping on the Nanostructures and Electrical Properties of ZnO Nanorod Arrays