Optimization of Triton-X 100 surfactant in the development of Bismuth Oxide thin film semiconductor for improved photoelectrochemical water oxidation behavior

2015 ◽  
Vol 185 ◽  
pp. 229-235 ◽  
Author(s):  
Paramita Hajra ◽  
Sanjib Shyamal ◽  
Aparajita Bera ◽  
Harahari Mandal ◽  
Debasis Sariket ◽  
...  
Keyword(s):  
Thin Film ◽  
Bismuth Oxide ◽  
Water Oxidation ◽  
Oxidation Behavior ◽  
Oxide Thin Film ◽  
Triton X ◽  
Photoelectrochemical Water Oxidation

Enhanced Photoelectrochemical Water Oxidation Performance by Fluorine Incorporation in BiVO4 and Mo:BiVO4 Thin Film Photoanodes

2019 ◽  
Vol 11 (18) ◽  
pp. 16430-16442 ◽  
Author(s):  
Martin Rohloff ◽  
Björn Anke ◽  
Olga Kasian ◽  
Siyuan Zhang ◽  
Martin Lerch ◽  
...  
Keyword(s):  
Thin Film ◽  
Water Oxidation ◽  
Oxidation Performance ◽  
Photoelectrochemical Water Oxidation

Passivation of surface states by ALD-grown TiO2 overlayers on Ta3N5 anodes for photoelectrochemical water oxidation

2016 ◽  
Vol 52 (57) ◽  
pp. 8806-8809 ◽  
Author(s):  
Peng Zhang ◽  
Tuo Wang ◽  
Jinlong Gong
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Water Oxidation ◽  
Surface States ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Photoelectrochemical Water Oxidation

This paper describes the fabrication of TiO2 overlayers by atomic layer deposition to passivate the surface states on Ta3N5 thin film anodes for photoelectrochemical water oxidation.

scholarly journals Synthesis, surface tension, optical and dielectric properties of bismuth oxide thin film

2017 ◽  
Vol 35 (1) ◽  
pp. 87-93 ◽  
Author(s):  
Fatma Meydanerİ Tezel ◽  
İ. Afşin Kariper
Keyword(s):  
Thin Film ◽  
Surface Tension ◽  
Dielectric Constant ◽  
Bismuth Oxide ◽  
Optical Transmission ◽  
Optical Band Gap ◽  
Unit Area ◽  
Optical Transmittance ◽  
Contact Angles ◽  
Oxide Thin Film

AbstractBismuth oxide thin film was deposited by chemical bath deposition (CBD) technique onto a glass substrate. The grain size (D), dislocation density (δ) and number of crystallites per unit area (N), i.e. structural properties of the thin film were determined as 16 nm, 39.06× 10–4line/nm2, 31.25 × 10–31/nm2, respectively. Optical transmittance properties of the thin film were investigated by using a UV-Vis spectrophotometer. The optical band gap (Eg) for direct transitions, optical transmission (T %), reflectivity (R %), absorption, refractive index (nr), extinction coefficient (k), dielectric constant (∊) of the thin film were found to be 3.77 eV, 25.23 %, 32.25 %, 0.59, 3.62, 0.04 and 2.80, respectively. The thickness of the film was measured by AFM, and was found to be 128 nm. Contact angles of various liquids on the oxide thin film were determined by Zisman method, and surface tension was calculated to be 31.95 mN/m.

Asymmetric contact in tin bismuth oxide thin film transistors

2016 ◽  
Vol 214 (3) ◽  
pp. 1600589 ◽  
Author(s):  
Jianwen Yang ◽  
Yanbing Han ◽  
Ruofan Fu ◽  
Jinhua Ren ◽  
Qun Zhang
Keyword(s):  
Thin Film ◽  
Bismuth Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Asymmetric Contact

Structural changes of water molecules during photoelectrochemical water oxidation on TiO2 thin film electrodes

2018 ◽  
Vol 20 (5) ◽  
pp. 3388-3394 ◽  
Author(s):  
Chandana Sampath Kumara Ranasinghe ◽  
Akira Yamakata
Keyword(s):  
Thin Film ◽  
Hydrogen Bonding ◽  
Water Oxidation ◽  
Structural Changes ◽  
Tio2 Thin Film ◽  
Water Molecules ◽  
Hydrogen Bonding Networks ◽  
Thin Film Electrodes ◽  
Photoelectrochemical Water Oxidation

Hydrogen bonding networks at the water/TiO2 interface were heavily disrupted and an isolated OH band appeared during photoelectrochemical water oxidation.

Electrocatalytic water oxidation at low energy cost by a highly active and robust calcium–manganese oxide thin film sintered on an FTO electrode with ethyl methyl imidazolium triflate ionic liquid

2017 ◽  
Vol 5 (29) ◽  
pp. 15167-15174 ◽  
Author(s):  
Zaki N. Zahran ◽  
Eman A. Mohamed ◽  
Yoshinori Naruta
Keyword(s):  
Thin Film ◽  
Ionic Liquid ◽  
Manganese Oxide ◽  
Water Oxidation ◽  
Energy Cost ◽  
Low Energy ◽  
Oxide Thin Film ◽  
Ethyl Methyl ◽  
Highly Active

A CaMn-oxide supported on FTO with EMI triflate showed efficient water oxidation at low overpotentials due to the involvement of MnIV species.

Photoelectrochemical water oxidation using a Bi2MoO6/MoO3 heterojunction photoanode synthesised by hydrothermal treatment of an anodised MoO3 thin film

2016 ◽  
Vol 4 (18) ◽  
pp. 6964-6971 ◽  
Author(s):  
Shi Nee Lou ◽  
Jason Scott ◽  
Akihide Iwase ◽  
Rose Amal ◽  
Yun Hau Ng
Keyword(s):  
Thin Film ◽  
Hydrothermal Treatment ◽  
Conversion Efficiency ◽  
Water Oxidation ◽  
Photoelectrochemical Water Oxidation

A photoactive Bi2MoO6/MoO3 heterojunction electrode derived from a direct thin-film-route showed close to 100% faradic photocurrent-to-O2 conversion efficiency.

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