Electrochemical studies of silicon nitride electron blocking layer for all-solid-state inorganic electrochromic device

2017 ◽  
Vol 252 ◽  
pp. 331-337 ◽  
Author(s):  
Qingjiao Huang ◽  
Guobo Dong ◽  
Yu Xiao ◽  
Xungang Diao
2016 ◽  
Vol 109 (12) ◽  
pp. 123501 ◽  
Author(s):  
Min-Chuan Wang ◽  
Ming-Hao Hsieh ◽  
Yung-Chih Chen ◽  
Jen-Yuan Wang

RSC Advances ◽  
2021 ◽  
Vol 11 (36) ◽  
pp. 22199-22205
Author(s):  
Rachel L. Wilson ◽  
Thomas J. Macdonald ◽  
Chieh-Ting Lin ◽  
Shengda Xu ◽  
Alaric Taylor ◽  
...  

We describe CVD of nickel oxide (NiO) thin films using a new precursor [Ni(dmamp′)2], synthesised using a readily commercially available dialkylaminoalkoxide ligand (dmamp′), which is applied to synthesis of a hole transport-electron blocking layer.


2021 ◽  
pp. 2101238
Author(s):  
Mohammad Mahdi Tavakoli ◽  
Ji‐Hoon Park ◽  
Jeremiah Mwaura ◽  
Mayuran Saravanapavanantham ◽  
Vladimir Bulović ◽  
...  

2019 ◽  
Vol 11 (2) ◽  
pp. 1-11 ◽  
Author(s):  
Zhongjie Ren ◽  
Yi Lu ◽  
Hsin-Hung Yao ◽  
Haiding Sun ◽  
Che-Hao Liao ◽  
...  

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