Energy separation in a channel with permeable wall

Energy ◽  
2021 ◽  
pp. 122427
Author(s):  
D.E. Khazov ◽  
A.I. Leontiev ◽  
A.G. Zditovets ◽  
N.A. Kiselev ◽  
Yu.A. Vinogradov
2017 ◽  
Vol 607 ◽  
pp. A121 ◽  
Author(s):  
M. G. Bernardini ◽  
G. Ghirlanda ◽  
S. Campana ◽  
P. D’Avanzo ◽  
J.-L. Atteia ◽  
...  

The delay in arrival times between high and low energy photons from cosmic sources can be used to test the violation of the Lorentz invariance (LIV), predicted by some quantum gravity theories, and to constrain its characteristic energy scale EQG that is of the order of the Planck energy. Gamma-ray bursts (GRBs) and blazars are ideal for this purpose thanks to their broad spectral energy distribution and cosmological distances: at first order approximation, the constraints on EQG are proportional to the photon energy separation and the distance of the source. However, the LIV tiny contribution to the total time delay can be dominated by intrinsic delays related to the physics of the sources: long GRBs typically show a delay between high and low energy photons related to their spectral evolution (spectral lag). Short GRBs have null intrinsic spectral lags and are therefore an ideal tool to measure any LIV effect. We considered a sample of 15 short GRBs with known redshift observed by Swift and we estimate a limit on EQG ≳ 1.5 × 1016 GeV. Our estimate represents an improvement with respect to the limit obtained with a larger (double) sample of long GRBs and is more robust than the estimates on single events because it accounts for the intrinsic delay in a statistical sense.


1978 ◽  
Vol 29 (3) ◽  
pp. 345-351 ◽  
Author(s):  
J. Danon ◽  
S.V. Filseth ◽  
D. Feldmann ◽  
H. Zacharias ◽  
C.H. Dugan ◽  
...  

1999 ◽  
Vol 595 ◽  
Author(s):  
B. Shen ◽  
T. Someya ◽  
O. Moriwaki ◽  
Y. Arakawa

AbstractPhotoluminescence (PL) of modulation-doped Al0.22Ga0.78N/GaN heterostructures was investigated. The PL peak related to recombination between the two-dimensional electron gases (2DEG) and photoexcited holes is located at 3.448 eV at 40 K, which is 45 meV below the free excitons (FE) emission in GaN. The peak can be observed at temperatures as high as 80 K. The intensity of the 2DEG PL peak is enhanced significantly by incorporating a thin Al0.12Ga0.88N layer into the GaN layer near the heterointerface to suppress the diffusion of photoexcited holes. The energy separation of the 2DEG peak and the GaN FE emission decreases with increasing temperature. Meanwhile, the 2DEG peak energy increases with increasing excitation intensity. These results are attributed to the screening effect of electrons on the bending of the conduction band at the heterointerface, which becomes stronger when temperature or excitation intensity is increased.


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