One-component chemically amplified resist composed of polymeric sulfonium salt PAGs for high resolution patterning

2019 ◽  
Vol 114 ◽  
pp. 11-18 ◽  
Author(s):  
Qianqian Wang ◽  
Chenying Zhang ◽  
Chenfeng Yan ◽  
Fengjuan You ◽  
Liyuan Wang
Keyword(s):  
High Resolution ◽  
Sulfonium Salt ◽  
Chemically Amplified ◽  
Chemically Amplified Resist

Negative tone chemically amplified resist formulation optimizations for ultra high-resolution lithography

2003 ◽  
Vol 67-68 ◽  
pp. 274-282 ◽  
Author(s):  
J. Saint-Pol ◽  
S. Landis ◽  
C. Gourgon ◽  
S. Tedesco ◽  
R. Hanawa ◽  
...  
Keyword(s):  
High Resolution ◽  
Chemically Amplified ◽  
Chemically Amplified Resist ◽  
Negative Tone

A New Chemically Amplified Resist for High Resolution Patterning by E-Beam Lithography

2010 ◽  
Vol 10 (11) ◽  
pp. 7130-7133 ◽  
Author(s):  
Bing-Rui Lu ◽  
Yifang Chen ◽  
Ejaz Huq ◽  
Xin-Ping Qu ◽  
Ran Liu
Keyword(s):  
High Resolution ◽  
Chemically Amplified ◽  
Chemically Amplified Resist

A New Environmentally Stable Posyitve Tone Chemically Amplified Resist System - KRS

1993 ◽  
Vol 324 ◽  
Author(s):  
Wu-Song Iiuang ◽  
Ranee Kwong ◽  
Ahmad Katnani ◽  
Maitoud Khojasteh ◽  
Kim Y. Lee
Keyword(s):  
High Resolution ◽  
High Sensitivity ◽  
Vertical Profiles ◽  
High Contrast ◽  
Uv Lithography ◽  
Chemically Amplified ◽  
Strategic Plans ◽  
Chemically Amplified Resist ◽  
Deep Uv ◽  
Chemically Amplified Photoresist

AbstractIt is known that one of the main shortcomings of chemically amplified resist systems is their sensitivity to airborne base contaminants. The contaminants cause unpredictable linewidth variations deeming the resist incompatible with manufacturing. Besides other issues, this drawback has greatly contributed to the slow introduction of DUV into manufacturing and discouragcd most semiconductor manufactures from including DUV in their strategic plans. In this paper, we present a new positive tone chemically amplified photoresist system which is resilient to airborne base contaminants and it shows stable linewidth for more than 24 hours delay between exposure and development. This resist has high sensitivity (17-18 mj/cm2), high contrast (7), high resolution (0.35 um with λ = 248 rm and NA = 0.37) and large process latitude in deep-UV lithography. This resist also exhibits high resolution (0.1 um in 0.35 um thick resist) in E-beam lithography at a sensitivity of about 10 uC/cm2. Both lithographic systems (deep-UV and E-beam) yield nearly vertical profiles in the resist images.

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