Substrate quality effects on stabilized soil carbon reverse with depth

Geoderma ◽  
2022 ◽  
Vol 406 ◽  
pp. 115511
Author(s):  
Mengmeng Li ◽  
Travis Meador ◽  
Leopold Sauheitl ◽  
Georg Guggenberger ◽  
Gerrit Angst
2019 ◽  
Vol 680 ◽  
pp. 181-189 ◽  
Author(s):  
Isabel Greenberg ◽  
Michael Kaiser ◽  
Anna Gunina ◽  
Philipp Ledesma ◽  
Steven Polifka ◽  
...  

2020 ◽  
Vol 703 ◽  
pp. 134615
Author(s):  
C. Wade Ross ◽  
Sabine Grunwald ◽  
Jason G. Vogel ◽  
Daniel Markewitz ◽  
Eric J. Jokela ◽  
...  
Keyword(s):  

2019 ◽  
Vol 2 (1) ◽  
Author(s):  
Gerrit Angst ◽  
Carsten W. Mueller ◽  
Isabel Prater ◽  
Šárka Angst ◽  
Jan Frouz ◽  
...  

AbstractEarthworms co-determine whether soil, as the largest terrestrial carbon reservoir, acts as source or sink for photosynthetically fixed CO2. However, conclusive evidence for their role in stabilising or destabilising soil carbon has not been fully established. Here, we demonstrate that earthworms function like biochemical reactors by converting labile plant compounds into microbial necromass in stabilised carbon pools without altering bulk measures, such as the total carbon content. We show that much of this microbial carbon is not associated with mineral surfaces and emphasise the functional importance of particulate organic matter for long-term carbon sequestration. Our findings suggest that while earthworms do not necessarily affect soil organic carbon stocks, they do increase the resilience of soil carbon to natural and anthropogenic disturbances. Our results have implications for climate change mitigation and challenge the assumption that mineral-associated organic matter is the only relevant pool for soil carbon sequestration.


Author(s):  
H. L. Tsai ◽  
J. W. Lee

Growth of GaAs on Si using epitaxial techniques has been receiving considerable attention for its potential application in device fabrication. However, because of the 4% lattice misfit between GaAs and Si, defect generation at the GaAs/Si interface and its propagation to the top portion of the GaAs film occur during the growth process. The performance of a device fabricated in the GaAs-on-Si film can be degraded because of the presence of these defects. This paper describes a HREM study of the effects of both the substrate surface quality and postannealing on the defect propagation and elimination.The silicon substrates used for this work were 3-4 degrees off [100] orientation. GaAs was grown on the silicon substrate by molecular beam epitaxy (MBE).


Author(s):  
W. R. EMANUEL ◽  
J. S. OLSON ◽  
W. M. POST ◽  
A. G. STANGENBERGER ◽  
P. J. ZINKE

Author(s):  
W. R. EMANUEL ◽  
J. S. OLSON ◽  
W. M. POST ◽  
A. G. STANGENBERGER ◽  
P. J. ZINKE

Author(s):  
W. R. EMANUEL ◽  
J. S. OLSON ◽  
W. M. POST ◽  
A. G. STANGENBERGER ◽  
P. J. ZINKE

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