Effects of substrate quality and annealing on defect structures at GaAs/Si interfaces

1987 ◽  
Vol 45 ◽  
pp. 340-341
Author(s):  
H. L. Tsai ◽  
J. W. Lee
Keyword(s):  
Growth Process ◽  
Molecular Beam ◽  
Substrate Surface ◽  
Lattice Misfit ◽  
Device Fabrication ◽  
Silicon Substrates ◽  
Defect Structures ◽  
Gaas Film ◽  
Substrate Quality ◽  
Gaas On Si

Growth of GaAs on Si using epitaxial techniques has been receiving considerable attention for its potential application in device fabrication. However, because of the 4% lattice misfit between GaAs and Si, defect generation at the GaAs/Si interface and its propagation to the top portion of the GaAs film occur during the growth process. The performance of a device fabricated in the GaAs-on-Si film can be degraded because of the presence of these defects. This paper describes a HREM study of the effects of both the substrate surface quality and postannealing on the defect propagation and elimination.The silicon substrates used for this work were 3-4 degrees off [100] orientation. GaAs was grown on the silicon substrate by molecular beam epitaxy (MBE).

Growth of AlGaN/GaN HEMTs on Silicon Substrates by MBE

2008 ◽  
Vol 1068 ◽  
Author(s):  
Fabrice Semond ◽  
Yvon Cordier ◽  
Franck Natali ◽  
Arnaud Le Louarn ◽  
Stéphane Vézian ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Process ◽  
Molecular Beam ◽  
Silicon Substrates ◽  
Si Substrates ◽  
Key Issues ◽  
Gan Hemts

ABSTRACTDuring the last ten years, we have developed an efficient growth process of nitrides on silicon substrates by molecular beam epitaxy. In collaboration with partners AlGaN/GaN HEMTs on Si having promising performances have been fabricated. Focusing on the growth aspect and underlying some of the key issues, we present in this paper an overview of our contribution in the field of AlGaN/GaN HEMTs on Si substrates.

scholarly journals Growth process and nanostructure of crystalline GaAs on Si(110) surface prepared by molecular beam epitaxy

2006 ◽  
Vol 289 (1) ◽  
pp. 76-80 ◽  
Author(s):  
Hiroyuki Usui ◽  
Kotaro Ishiji ◽  
Hidehiro Yasuda ◽  
Hirotaro Mori
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Process ◽  
Molecular Beam ◽  
Gaas On Si

scholarly journals Synthesis of Printable Polyvinyl Alcohol for Aerosol Jet and Inkjet Printing Technology

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 220
Author(s):  
Mahmuda Akter Monne ◽  
Chandan Qumar Howlader ◽  
Bhagyashree Mishra ◽  
Maggie Yihong Chen
Keyword(s):  
Polyvinyl Alcohol ◽  
Inkjet Printing ◽  
Micro Electro Mechanical System ◽  
Device Fabrication ◽  
Silicon Substrates ◽  
Excellent Candidate ◽  
Jet Printing ◽  
Inkjet Printing Technology ◽  
Transistor Fabrication ◽  
Aerosol Jet Printing

Polyvinyl Alcohol (PVA) is a promising polymer due to its high solubility with water, availability in low molecular weight, having short polymer chain, and cost-effectiveness in processing. Printed technology is gaining popularity to utilize processible solution materials at low/room temperature. This work demonstrates the synthesis of PVA solution for 2.5% w/w, 4.5% w/w, 6.5% w/w, 8.5% w/w and 10.5% w/w aqueous solution was formulated. Then the properties of the ink, such as viscosity, contact angle, surface tension, and printability by inkjet and aerosol jet printing, were investigated. The wettability of the ink was investigated on flexible (Kapton) and non-flexible (Silicon) substrates. Both were identified as suitable substrates for all concentrations of PVA. Additionally, we have shown aerosol jet printing (AJP) and inkjet printing (IJP) can produce multi-layer PVA structures. Finally, we have demonstrated the use of PVA as sacrificial material for micro-electro-mechanical-system (MEMS) device fabrication. The dielectric constant of printed PVA is 168 at 100 kHz, which shows an excellent candidate material for printed or traditional transistor fabrication.

Molecular Beam Epitaxy of Controlled Single Domain GaAs on Si (100)

1986 ◽  
Vol 25 (Part 2, No. 4) ◽  
pp. L285-L287 ◽  
Author(s):  
Mitsuo Kawabe ◽  
Toshio Ueda
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Domain ◽  
Gaas On Si

Focused ion molecular-beam epitaxy – a novel approach to 3D device fabrication using simultaneous p- and n-type doping

1999 ◽  
Vol 201-202 ◽  
pp. 12-16 ◽  
Author(s):  
P.J.A Sazio ◽  
S Vijendran ◽  
W Yu ◽  
H.E Beere ◽  
G.A.C Jones ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Device Fabrication ◽  
Novel Approach

Heterostructures of GaAs and AlAs on Silicon: X-Ray Analysis and Excimer Laser Annealing

1988 ◽  
Vol 116 ◽  
Author(s):  
A. Georgakilas ◽  
M. Fatemi ◽  
L. Fotiadis ◽  
A. Christou
Keyword(s):  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Excimer Laser ◽  
Molecular Beam ◽  
Laser Annealing ◽  
High Resistivity ◽  
Silicon Substrates ◽  
Excimer Laser Annealing ◽  
X Ray ◽  
High Resistivity Silicon

AbstractOne micron thick AlAs/GaAs structures have been deposited by molecular beam epitaxy onto high resistivity silicon substrates. Subsequent to deposition, it is shown that Excimer laser annealing up to 120mJ/cm2 at 248nm improves the GaAs mobility to approximately 2000cm2 /v-s. Dislocation density, however, did not decrease up to 180mJ/cm2 showing that improvement in transport properties may not be accompanied by an associated decrease in dislocation density at the GaAs/Si interface.

Cost-effective selective-area growth of GaN-based nanocolumns on silicon substrates by molecular-beam epitaxy

2019 ◽  
Vol 514 ◽  
pp. 124-129
Author(s):  
Yukun Zhao ◽  
Wenxian Yang ◽  
Shulong Lu ◽  
Yuanyuan Wu ◽  
Xin Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Cost Effective ◽  
Silicon Substrates ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

Influences of MOS Device Characteristic under Different Oxygen-Dose Participations in the Silicon Substrate

2015 ◽  
Vol 656-657 ◽  
pp. 8-13
Author(s):  
Shen Li Chen ◽  
Tsung Shiung Lee ◽  
Yu Ting Huang
Keyword(s):  
Silicon Substrate ◽  
Czochralski Method ◽  
Silicon Substrates ◽  
Trap Charge ◽  
Substrate Quality ◽  
Mos Devices ◽  
Starting Point ◽  
Charge Characteristic ◽  
Mos Device

A silicon substrate is the starting point of producing the semiconductor component, so that the quality of semiconductor substrate is very important during the VLSI fabrication. In this paper, we will evaluate the influence of MOS device characteristics under different oxygen impurities in silicon substrates. In the course of silicon substrate pulling process by Czochralski method, the defect and impurity will be existed; the oxygen atom will be induced substrate dislocations and affected the substrate quality. In this work, different oxygen doses will be used in wafer to study the impacts on MOS CV curve characteristic, interface trap charge characteristic, ID-VDScurve, ID-VGScurve, and threshold voltage behaviors of MOS devices.

scholarly journals О газоструйном методе осаждения наноструктурных пленок серебра

2019 ◽  
Vol 89 (6) ◽  
pp. 830
Author(s):  
Н.Ю. Быков ◽  
А.И. Сафонов ◽  
Д.В. Лещев ◽  
С.В. Старинский ◽  
А.В. Булгаков
Keyword(s):  
Substrate Surface ◽  
Supersonic Jet ◽  
Direct Simulation Monte Carlo ◽  
Gas Jet ◽  
Silver Clusters ◽  
Silicon Substrates ◽  
Silver Nanostructures ◽  
Carrier Gas ◽  
Silver Vapor ◽  
Background Gas

AbstractThe synthesis of thin silver films by the gas-jet deposition method is experimentally and theoretically studied. When the metal is deposited onto silicon substrates from a supersonic jet of silver vapor with a helium carrier gas, nanostructured films with a 3−30 nm size of nanostructures are obtained for a 1230−1380 K range of jet source temperatures. The data on Ag–He gas-jet dynamics when it is expanded into vacuum (velocity, temperature, concentration, flux of particles onto a substrate) depending on parameters at the source (vapor temperature, flow rate of a carrier gas) are obtained by the method of direct simulation Monte Carlo. The range of optimal helium flow rates, when the efficiency of a gas-jet source is maximal, is determined. It is established that the presence of a background gas in a deposition chamber at pressure higher than 1 Pa decreases the flow of particles onto a substrate, and a simple way of its evaluation is proposed. Conditions for formation of silver clusters in the jet are determined by using the simulation. It is shown that for experimental deposition regimes there are no clusters in the jet, and the observed silver nanostructures are formed on the substrate surface.

Sign in / Sign up

Export Citation Format

Share Document