Analysis of a concave parabolic fin with vertically cutting fin tip and variable fin base thickness

Author(s):  
Hyung Suk Kang
Keyword(s):  
2017 ◽  
Vol 28 (10) ◽  
pp. 10LT01 ◽  
Author(s):  
Arash Dehzangi ◽  
Abbas Haddadi ◽  
Sourav Adhikary ◽  
Manijeh Razeghi
Keyword(s):  

2016 ◽  
Vol 154 (4) ◽  
pp. 707-714 ◽  
Author(s):  
Shawn M. Stevens ◽  
Habib G. Rizk ◽  
Wesley R. McIlwain ◽  
Paul R. Lambert ◽  
Ted A. Meyer

1980 ◽  
Vol 102 (3) ◽  
pp. 420-425 ◽  
Author(s):  
P. Razelos ◽  
K. Imre

Optimum dimensions of circular fins of trapezoidal profile with variable thermal conductivity and heat transfer coefficients are obtained. Linear variation of the thermal conductivity is considered of the form k = k0(1 + εT/T0), and the heat transfer coefficient is assumed to vary according to a power law with distance from the bore, expressed as h = K[(r − r0)/(r0 − re)]m. The results for m = 0, 0.8, 2.0, and −0.4 ≤ ε ≤ 0.4, have been expressed by suitable nondimensional parameters which are presented graphically. It is shown that considering the thermal conductivity as constant, the optimum base thickness and volume of the fin are inversely proportional to the thermal conductivity of the material of the fin, while the optimum length and effectiveness are independent of the properties of the material used.


2018 ◽  
Vol 44 (10) ◽  
pp. 873-876 ◽  
Author(s):  
A. V. Sachenko ◽  
V. P. Kostylyov ◽  
A. V. Bobyl ◽  
V. N. Vlasyuk ◽  
I. O. Sokolovskyi ◽  
...  

2002 ◽  
Vol 80 (7) ◽  
pp. 733-743 ◽  
Author(s):  
M Ben Amar ◽  
A Ben Arab

The photonic's method is used in the study of monocristalline silicon solar cell (N+P). The induced photocurrent in the cell is analyzed with respect to the technological parameters such as the optical absorption coefficient of silicon and the emitter and base thickness. The spatial and frequential variations of the photocurrent of the cell, when the latter is illuminated by a sinusoidal modulated light, allow access to the diffusion length and lifetime of the minority carriers generated in a given region of the cell. In this paper, the physical parameters related to the base region are determined. In addition, this access is shown to be possible only when the total photocurrent of the cell is reduced to the base diffusion photocurrent.


2007 ◽  
Vol 556-557 ◽  
pp. 889-894 ◽  
Author(s):  
Wolfgang Bartsch ◽  
Heinz Mitlehner ◽  
S. Gediga

In this contribution we summarize measurements on bipolar high voltage SiC-diodes which were fabricated on 4H-SiC wafers preferentially cut 4° off the [0001] basal plane, whereas the p-emitter thickness was varied in predetermined ratios to the n-base thickness. The switching behaviour of optimized 6.5 kV-Diodes at a current level of 25 A is shown at DC link voltages up to 4 kV and at a junction temperature of 125°C. Experimental results are discussed in terms of snappiness.


2004 ◽  
Vol 49 (2) ◽  
pp. 269-271
Author(s):  
S. V. Shutov ◽  
A. N. Frolov ◽  
V. N. Litvinenko ◽  
A. A. Frolov

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