WITHDRAWN: Deposition of nickel oxide-yttria stabilized zirconia thin films by reactive magnetron sputtering

2018 ◽  
Author(s):  
A.A. Solovyev ◽  
A.M. Lebedynskiy ◽  
A.V. Shipilova ◽  
I.V. Ionov ◽  
E.A. Smolyanskiy ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Nickel Oxide ◽  
Reactive Magnetron Sputtering ◽  
Yttria Stabilized Zirconia ◽  
Reactive Magnetron ◽  
Stabilized Zirconia

scholarly journals Reactive magnetron sputtering of uniform yttria-stabilized zirconia coatings in an industrial setup

2012 ◽  
Vol 206 (19-20) ◽  
pp. 4126-4131 ◽  
Author(s):  
S. Sønderby ◽  
A.J. Nielsen ◽  
B.H. Christensen ◽  
K.P. Almtoft ◽  
J. Lu ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Yttria Stabilized Zirconia ◽  
Reactive Magnetron ◽  
Stabilized Zirconia

Seeded Heteroepitaxy and the Overgrowth of InN Films: Nucleation with Lattice Mismatched AIN

1992 ◽  
Vol 280 ◽  
Author(s):  
Thomas J. Kistenmacher ◽  
Scott A. Ecelberger ◽  
Wayne A. Bryden
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Electrical Transport ◽  
Lattice Mismatch ◽  
Yttria Stabilized Zirconia ◽  
High Symmetry ◽  
Reactive Magnetron ◽  
Stabilized Zirconia ◽  
Electrical Transport Properties ◽  
Fused Quartz

ABSTRACTThe growth and properties of thin films of InN on a variety of substrates nucleated by a 400Å layer of AIN have been shown to be dependent on the lattice mismatch (LMM) with the substrate. Examples are drawn from growth of InN thin films by reactive magnetron sputtering on high symmetry faces of a variety of crystalline substrates [(00.1) sapphire, (111) silicon and (111) yttria-stabilized zirconia, and (001) mica] and amorphous fused quartz. Striking is a comparison of the electrical transport properties for nucleated and unnucleated InN films. For example, the ratio of the Hall mobilities for nucleated and unnucleated InN films deposited on (00.1) sapphire (LMM for AIN and InN of 13.0% and 29.0%, respectively) is ∼102, while this ratio for nucleated and unnucleated InN films on (111) zirconia (LMM for AIN and InN of −14.8% and −7.8%, respectively) is ∼10−2. While all the factors underlying these results are not necessarily obvious, it is rather apparent that this trend in Hall mobility stems from a contrasting trend in film resistivity at a more nearly constant value for the carrier concentration.

Role of carbon in the formation of hard Ge1−xCx thin films by reactive magnetron sputtering

2011 ◽  
Vol 406 (13) ◽  
pp. 2658-2662 ◽  
Author(s):  
Chaoquan Hu ◽  
Liang Qiao ◽  
Hongwei Tian ◽  
Xianyi Lu ◽  
Qing Jiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron

Fabrication of MgAl$_{2}$O$_{4}$ Thin Films on Ferromagnetic Heusler Alloy Fe$_{2}$CrSi by Reactive Magnetron Sputtering

2012 ◽  
Vol 51 (2) ◽  
pp. 02BM04 ◽  
Author(s):  
Naoto Fukatani ◽  
Keima Inagaki ◽  
Kenichiro Mari ◽  
Hirohito Fujita ◽  
Tetsuta Miyawaki ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Heusler Alloy ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron
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