On the effect of the extinction ratio and the modulation index on optical up conversion using DSBSC modulation and transmitting over different fiber links

Optik ◽  
2016 ◽  
Vol 127 (24) ◽  
pp. 11845-11853 ◽  
Author(s):  
Dhananjay Patel ◽  
Vinay Kumar Singh ◽  
U.D. Dalal
2018 ◽  
Vol 32 (34n36) ◽  
pp. 1840104
Author(s):  
Xiaogang Chen

Performance improvement for optical generation of octupling millimeter wave signal based on dual-parallel Mach–Zehnder modulator (MZM) without optical filtering through optimization of modulation index of MZM is proposed. Theoretical derivation and simulation verification are provided for the octupling millimeter wave generation scheme, extinction ratio (EXT) of practical MZM is considered. The effect of imperfect EXT of commercially available MZM on optical sideband suppression ratio (OSSR) and RF spurious suppression ratio (RSSR) of the generated octupling optical millimeter wave is investigated. The results show that the performance of generated octupling millimeter wave with modulation index optimization is stable and insensitive to the EXT of MZM. While for the approach without modulation index enhancement, an additional filter is required to generate high quality optical millimeter wave.


2020 ◽  
Vol 10 (4) ◽  
pp. 369-380
Author(s):  
K. Maji ◽  
K. Mukherjee ◽  
A. Raja

All optical tri-state frequency encoded logic gates NOT and NAND are proposed and numerically investigated using TOAD based interferometric switch for the first time to the best of our knowledge. The optical power spectrum, extinction ratio, contrast ration, and amplified spontaneous noise are calculated to analyze and confirm practical feasibility of the gates. The proposed device works for low switching energy and has high contrast and extinction ratio as indicated in this work.


Author(s):  
Akihiro KADOHATA ◽  
Takafumi TANAKA ◽  
Wataru IMAJUKU ◽  
Fumikazu INUZUKA ◽  
Atsushi WATANABE

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Jesuwanth Sugesh Ramesh Gabriel ◽  
Sivasubramanian Arunagiri

AbstractIn this paper, we report the performance of a carrier depletion Silicon PIN phase shifter with over layer of 130 nm. It is observed that an optimum intrinsic gap of 250 nm for a device length of 5 mm at 2 V, resulted in Extinction Ratio (ER) of 23.41 dB and Bit Error Rate (BER) of 1.00 × 10−7 is obtained for 50 Gbps. The phase shifter is also designed for length 2 mm with an intrinsic gap of 100 nm at an operating voltage <4 V. The study also reveals that the proposed design for Mach-Zehnder modulator operating at a data rate of 100 Gbps for the concentration of P = 7 × 1017 cm−3 and N = 5 × 1017 cm−3 gives better BER and phase performance. The proposed design was also analysed in an intra-data centre communication setup of fibre length 15 km.


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