In this paper, three dimensional discrete dislocation dynamics method was used to quantitatively investigate the influence of initial defects on mechanical response of single crystal copper. Both the irradiation defects (interstitial loops) and random dislocation lines with different densities are considered. The simulation results demonstrate that the yield strength of single crystal copper is higher with higher initial dislocation density and higher interstitial loop density. Dislocation density increases quickly by nucleation and multiplication and microbands are formed during plastic deformation when only the random dislocation lines are initially considered. Characteristics of microbands show excellent agreement with experiment results. Dislocation multiplication is suppressed in the presence of interstitial loops, and junctions and locks between dislocations and interstitial loops are formed. Dislocation density evolution shows fluctuation accompanied with strain-stress curve fluctuation.