Influence of substrate properties and interfacial roughness on static and dynamic tensile behaviour of rock-shotcrete interface from macro and micro views

Author(s):  
Jianbo Zhu ◽  
Weiyue Bao ◽  
Qi Peng ◽  
Xifei Deng
1997 ◽  
Vol 311 (1-2) ◽  
pp. 310-316 ◽  
Author(s):  
M Poppeller ◽  
R Abermann

2019 ◽  
Vol 963 ◽  
pp. 109-113
Author(s):  
Birgit Kallinger ◽  
Jürgen Erlekampf ◽  
Katharina Rosshirt ◽  
Patrick Berwian ◽  
Matthias Stockmeier ◽  
...  

Two fully loaded epitaxial growth runs with 16 wafers in total were conducted in the AIXTRON G5 WW reactor in order to keep epigrowth conditions constant. The wafers were selected with a large spread of specific resistivity and dislocation densities. The resulting epilayers showed very good intra-wafer homogeneities as well as excellent wafer-to-wafer and run-to-run reproducibility with regard to epilayer thickness and doping concentration, point defect concentrations of Z1/2 and EH6/7 and the resulting Shockley-Read-Hall carrier lifetime. We found that the dislocation densities of the underlying substrates are influencing the stacking fault densities of the epilayers, which then vary between 0.1 and 10 cm-2. A substrate effect on the effective minority carrier lifetime was found.


2007 ◽  
Vol 83 (4) ◽  
pp. 367-381 ◽  
Author(s):  
Moustafa Hamieh ◽  
Samer Al Akhrass ◽  
Tayssir Hamieh ◽  
Pascal Damman ◽  
Sylvain Gabriele ◽  
...  

2017 ◽  
Vol 27 (1-2) ◽  
pp. 73-83 ◽  
Author(s):  
Yongli Zhao ◽  
Zexin Yu ◽  
Marie-Pierre Planche ◽  
Audrey Lasalle ◽  
Alain Allimant ◽  
...  

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