Effects of oxygen pressure on LiCoO2 thin film cathodes and their electrochemical properties grown by pulsed laser deposition

2006 ◽  
Vol 424 (1-2) ◽  
pp. 342-346 ◽  
Author(s):  
S.B. Tang ◽  
M.O. Lai ◽  
L. Lu
Keyword(s):  
Thin Film ◽  
Electrochemical Properties ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition

Preparation and electrochemical properties of Li4Ti5O12 thin film electrodes by pulsed laser deposition

2009 ◽  
Vol 193 (2) ◽  
pp. 816-821 ◽  
Author(s):  
Jianqiu Deng ◽  
Zhouguang Lu ◽  
I. Belharouak ◽  
K. Amine ◽  
C.Y. Chung
Keyword(s):  
Thin Film ◽  
Electrochemical Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Thin Film Electrodes

Nano-Polycrystalline Vanadium Oxide Thin Films Prepared by Pulsed Laser Deposition

2008 ◽  
Vol 8 (5) ◽  
pp. 2604-2608 ◽  
Author(s):  
Y. L. Wang ◽  
M. C. Li ◽  
X. K. Chen ◽  
G. Wu ◽  
J. P. Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
Vanadium Oxide ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Thin Films ◽  
Vanadium Oxide Thin Films

Nano-polycrystalline vanadium oxide thin films have been successfully produced by pulsed laser deposition on Si(100) substrates using a pure vanadium target in an oxygen atmosphere. The vanadium oxide thin film is amorphous when deposited at relatively low substrate temperature (500 °C) and enhancing substrate temperature (600–800 °C) appears to be efficient in crystallizing VOx thin films. Nano-polycrystalline V3O7 thin film has been achieved when deposited at oxygen pressure of 8 Pa and substrate temperature of 600 °C. Nano-polycrystalline VO2 thin films with a preferred (011) orientation have been obtained when deposited at oxygen pressure of 0.8 Pa and substrate temperatures of 600–800 °C. The vanadium oxide thin films deposited at high oxygen pressure (8 Pa) reveal a mix-valence of V5+ and V4+, while the VOx thin films deposited at low oxygen pressure (0.8 Pa) display a valence of V4+. The nano-polycrystalline vanadium oxide thin films prepared by pulsed laser deposition have smooth surface with high qualities of mean crystallite size ranging from 30 to 230 nm and Ra ranging from 1.5 to 22.2 nm. Relative low substrate temperature and oxygen pressure are benifit to aquire nano-polycrystalline VOx thin films with small grain size and low surface roughness.

Effect of oxygen pressure on the p-type conductivity of Ga, P co-doped ZnO thin film grown by pulsed laser deposition

2016 ◽  
Vol 42 (3) ◽  
pp. 4136-4142 ◽  
Author(s):  
Woo-Seok Noh ◽  
Jung-A Lee ◽  
Joon-Hyung Lee ◽  
Young-Woo Heo ◽  
Jeong-Joo Kim
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Film ◽  
Doped Zno ◽  
Effect Of Oxygen ◽  
P Type ◽  
Co Doped
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