The growth temperature dependence of the
InN
film’s crystalline quality is reported.
InN
films are grown on sapphire substrates from 570 to 650 °C with low-temperature
GaN
buffers by metalorganic vapor phase epitaxy (MOVPE). The X-ray rocking curves and reciprocal space mappings of the symmetric reflection (0 0 0 2) and asymmetric reflection (1 0 1 2) are measured with high resolution X-ray diffraction. The results indicate that the crystallinity is sensitive to the growth temperature for MOVPE
InN. At growth temperature 580 °C, highly crystalline
InN
film has been obtained, for which the full-width-at-half-maxima of (0 0 0 2) and (1 0 1 2) rocking curves are 24 and 28 arcmin, respectively. The crystalline quality deteriorates drastically when the growth temperature exceeds 600 °C. Combined with the carrier concentration and mobility, the approach to improve the quality of
InN
film by MOVPE is discussed.