Multiferroic properties of Bi1−xAxFeO3 polycrystalline films on glass substrates (A = Ca, Sr, Ba and x=0.05–0.15)

2016 ◽  
Vol 683 ◽  
pp. 427-432 ◽  
Author(s):  
H.W. Chang ◽  
F.T. Yuan ◽  
K.T. Tu ◽  
S.Y. Lin ◽  
C.R. Wang ◽  
...  
Keyword(s):  
Polycrystalline Films ◽  
Multiferroic Properties ◽  
Glass Substrates

Multiferroic properties of Bi0.95R0.05FeO3 polycrystalline films on the glass substrates (R = La, Pr, Nd, Sm, and Ho)

2020 ◽  
Vol 276 ◽  
pp. 128216
Author(s):  
T.K. Lin ◽  
H.W. Chang ◽  
Y.H. Sung ◽  
C.R. Wang ◽  
D.H. Wei ◽  
...  
Keyword(s):  
Polycrystalline Films ◽  
Multiferroic Properties ◽  
Glass Substrates

Highly (0001)-oriented Al-doped ZnO polycrystalline films on amorphous glass substrates

2016 ◽  
Vol 120 (12) ◽  
pp. 125302 ◽  
Author(s):  
Junichi Nomoto ◽  
Katsuhiko Inaba ◽  
Minoru Osada ◽  
Shintaro Kobayashi ◽  
Hisao Makino ◽  
...  
Keyword(s):  
Polycrystalline Films ◽  
Glass Substrates ◽  
Amorphous Glass ◽  
Doped Zno

scholarly journals Multiferroic Properties of Highly c-Oriented BiFeO[sub 3] Thin Films on Glass Substrates

2010 ◽  
Vol 13 (1) ◽  
pp. G5 ◽  
Author(s):  
J. Y. Son ◽  
Young-Han Shin ◽  
S. W. Ryu ◽  
Hyungjun Kim ◽  
Hyun M. Jang
Keyword(s):  
Thin Films ◽  
Multiferroic Properties ◽  
Glass Substrates

The Development of Infrared Photosensitive Material Based on Polycrystalline PbS Films

1999 ◽  
Vol 607 ◽  
Author(s):  
C. Abarbanel ◽  
R. Shneck ◽  
Z. Dashevsky ◽  
S. Rotman
Keyword(s):  
Grain Boundaries ◽  
Activation Process ◽  
Polycrystalline Films ◽  
Lead Sulphide ◽  
Potential Barriers ◽  
Glass Substrates ◽  
Polycrystalline Thin Films ◽  
Phase Conductivity ◽  
Set Up ◽  
Increasing Temperature

AbstractPolycrystalline thin films of lead sulphide were deposited on glass substrates by the hot wall technique. The grain size varied from 100 to 500 A by varying the growth rate and the substrate temperature. The grain boundaries are assumed to influence the optoelectronic properties of polycrystalline films by generating potential energy relieves, estimated to reach 0.1 eV. We investigated the influence of the barrier height by introducing impurity atmospheres into the grain boundaries. Oxygen and indium were introduced into the films by diffusion from a gas phase. Conductivity was measured in the 80-300 K range. It rises with increasing temperature in oxygen doped films, indicating that conductivity is a thermal activation process. In the same time the conductivity of In doped PbS films decreases with temperature like in PbS single crystals. Photoconductivity was observed in films annealed in oxygen, which was significant up to room temperature. Carrier lifetime was found to decrease with rising temperature and be larger in films annealed in oxygen.A model is proposed to explain the optoelectronic behavior of the polycrystalline films. It is proposed that charge accumulation near grain boundaries set up potential barriers for free carriers. The barriers increase by oxygen and decreases by indium doping. The charge carriers generated by an illumination become spatially separated at grain boundaries. This separation retards their recombination and increases their lifetime, giving rise to persistent photoconductivity and potential high photosensitivity.

Multiferroic properties of (Bi, Ca)FeO 3 films on glass substrates

2015 ◽  
Vol 355 ◽  
pp. 121-126 ◽  
Author(s):  
H.W. Chang ◽  
C.Y. Shen ◽  
F.T. Yuan ◽  
K.T. Tu ◽  
Y.C. Lo ◽  
...  
Keyword(s):  
Multiferroic Properties ◽  
Glass Substrates

Low-temperature growth of GaAs polycrystalline films on glass substrates for space solar cell application

2000 ◽  
Vol 221 (1-4) ◽  
pp. 688-692 ◽  
Author(s):  
Mitsuru Imaizumi ◽  
Mitsuhiro Adachi ◽  
Yasunori Fujii ◽  
Yasuhiko Hayashi ◽  
Tetsuo Soga ◽  
...  
Keyword(s):  
Solar Cell ◽  
Low Temperature ◽  
Polycrystalline Films ◽  
Solar Cell Application ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Glass Substrates ◽  
Space Solar Cell
Sign in / Sign up

Export Citation Format

Share Document