Highly (0001)-oriented Al-doped ZnO polycrystalline films on amorphous glass substrates

In this study high quality of Al doped ZnO (ZAO) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature in order to study the thickness effect upon their structure, electrical and optical properties. XRD results show that the films are polycrystalline and with strongly preferred (002) orientation perpendicular to substrate surface whatever the thickness is. The crystallite size was calculated by Williamson-Hall method, while it increases as the film thickness increased. The lattice stress is mainly caused by the growth process. Hall measurements revealed electrical parameter very dependent upon thickness when the thickness of ZAO film is lower than 700 nm. The resistivity decreased and the carrier concentration and Hall mobility increases as the film thickness increased. When film thickness becomes larger, only a little change in the above properties was observed. All the films have high transmittance above 90% in visible range. Red shift of the absorption edge was observed as thickness increased. The optical energy bandgap decreased from 3.41eV to 3.30 eV with the increase of film thickness.

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Dual-donor (Zni and VO) mediated ferromagnetism in copper-doped ZnO micron-scale polycrystalline films: a thermally driven defect modulation process

Nanoscale ◽

10.1039/c3nr00136a ◽

2013 ◽

Vol 5 (9) ◽

pp. 3918 ◽

Cited By ~ 35

Author(s):

Liang Hu ◽

Jun Huang ◽

Haiping He ◽

Liping Zhu ◽

Shijiang Liu ◽

...

Keyword(s):

Polycrystalline Films ◽

Thermally Driven ◽

Doped Zno

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Aluminium/gallium, indium/gallium, and aluminium/indium co-doped ZnO thin films deposited via aerosol assisted CVD

Journal of Materials Chemistry C ◽

10.1039/c7tc04003b ◽

2018 ◽

Vol 6 (3) ◽

pp. 588-597 ◽

Cited By ~ 38

Author(s):

Dominic B. Potter ◽

Michael J. Powell ◽

Ivan P. Parkin ◽

Claire J. Carmalt

Keyword(s):

Thin Films ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Zno Thin Films ◽

Glass Substrates ◽

Doped Zno ◽

Indium Gallium ◽

Co Doped

Aluminium/gallium co-doped ZnO (AGZO), indium/gallium co-doped ZnO (IGZO), and aluminium/indium co-doped ZnO (AIZO) thin films were synthesised on glass substrates via aerosol assisted chemical vapour deposition (AACVD).

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The Resistive Switching Behavior of ZnO Films Depending on Li Dopant Concentration and Electrode Materials

Advances in Science and Technology ◽

10.4028/www.scientific.net/ast.99.75 ◽

2016 ◽

Vol 99 ◽

pp. 75-80

Author(s):

Arsen Igityan ◽

Yevgenia Kafadaryan ◽

Natella Aghamalyan ◽

Silva Petrosyan

Keyword(s):

Resistive Switching ◽

Electrode Materials ◽

Switching Behavior ◽

Zno Films ◽

Lithium Content ◽

Resistive Switching Behavior ◽

Bipolar Resistive Switching ◽

Glass Substrates ◽

Ohmic Behavior ◽

Doped Zno

Lithium (0, 1.0 and 10 at.%)-doped ZnO (LiZnO) polycrystalline thin films were deposited on Pt/SiO2, LaB6/Al2O3, Au/SiO2 and 20 at.% fluorine-doped SnO2(FTO)/glass substrates by an e-beam evaporation method. Metal/LiZnO/Metal sandwich structures were constructed by depositing different top electrodes (Ag, Al and Au) to find memristive characteristics depending on the lithium content and electrode materials. Compared with undoped and 1%Li-doped ZnO devices, the 10 at.%Li-doped ZnO (10LiZnO) device exhibits resistive switching memory. The Ag/10LiZnO/Pt and Ag/10LiZnO/LaB6 memory devices exhibit unipolar resistive switching behavior while bipolar resistive switching in Ag/10LiZnO/FTO, Au/10LiZnO/FTO and Al/10LiZnO/LaB6 structures is revealed. The dominant conduction mechanisms are explained in terms of Ohmic behavior, space charge limited current (SCLC) and Schottky emission for the URS and BRS behaviors.

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Synthesis and characterization of Mg-doped ZnO thin-films electrochemically grown on FTO substrates for optoelectronic applications

RSC Advances ◽

10.1039/d0ra06541b ◽

2020 ◽

Vol 10 (66) ◽

pp. 40467-40479

Author(s):

R. Kara ◽

L. Mentar ◽

A. Azizi

Keyword(s):

Thin Films ◽

Tin Oxide ◽

Zno Thin Films ◽

Synthesis And Characterization ◽

Deposition Method ◽

Glass Substrates ◽

Electrochemical Deposition Method ◽

Doped Zno ◽

Mg Doped

Mg-doped ZnO (MZO) thin films were successfully fabricated on fluorine-doped tin-oxide (FTO)-coated glass substrates by an electrochemical deposition method using aqueous electrolytes of 80 mM Zn(NO3)2 with different concentrations of Mg(NO3)2.

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Optical Properties and Raman Scattering Investigation of Ag Doped ZnO Thin Film Prepared by Two-Step Solution-Based Deposition Method

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.773-774.739 ◽

2015 ◽

Vol 773-774 ◽

pp. 739-743

Author(s):

A.N. Afaah ◽

N.A.M. Asib ◽

Aadila Aziz ◽

Ruziana Mohamed ◽

Kevin Alvin Eswar ◽

...

Keyword(s):

Thin Films ◽

Raman Scattering ◽

Ultra Violet ◽

Peak Shift ◽

Zno Thin Films ◽

Zno Films ◽

Deposition Method ◽

Immersion Method ◽

Glass Substrates ◽

Doped Zno

Mist-atomization deposition method was applied in order to grow ZnO nanoparticles on Au-seeded glass substrates acting as seeded template. Ag doped ZnO thin films were deposited on ZnO seeded templates by solution-immersion method. The influence of Ag doping content on the optical and Raman scattering properties of ZnO films were systematically investigated by UV-Vis transmittance measurement measured by ultra-violet visible spectroscopy (UV-Vis) and Raman scattering spectrum measured by Raman spectroscopy under room temperature. From UV-Vis transmittance measurement, the incorporation of Ag dopant to the ZnO makes the transmittance wavelength shifted to the shorter wavelength as compared to the pure ZnO. From Raman spectra, 4 cm-1 downshift is observed in Ag-doped thin films as compared to pure ZnO thin films. This Raman peak shift shows that a tensile stress existed in the Ag-doped ZnO film.

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