Fabrication of an IPL-sintered Cu circuit and its electrochemical migration behavior

The electrochemical migration (ECM) behavior of Sn-3.0Ag-0.5Cu solder alloy under thin electrolyte layers was investigated using a technique based on the coupling of in situ electrochemical measurements and optical observation. Results showed that the mean time to failure first increased and then decreased as thickness of the electrolyte layer increased, the maximum value was present at 200[Formula: see text][Formula: see text]m. The higher the bias voltage applied, the faster was the rate of dendrite growth. And, Sn leaded the ECM of SAC305 solder alloy. Mechanisms relevant have been proposed to explain the ECM behavior of Sn-3.0Ag-0.5Cu solder alloy.

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Contradictory electrochemical migration behavior of copper and lead

Proceedings of the 2011 34th International Spring Seminar on Electronics Technology (ISSE) ◽

10.1109/isse.2011.6053579 ◽

2011 ◽

Cited By ~ 4

Author(s):

Balint Medgyes ◽

Balazs Illes

Keyword(s):

Electrochemical Migration ◽

Migration Behavior

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Electrochemical Migration behavior of Sn9Zn

2019 20th International Conference on Electronic Packaging Technology(ICEPT) ◽

10.1109/icept47577.2019.245226 ◽

2019 ◽

Author(s):

Xiao Qi ◽

Haoran Ma ◽

Xiaogan Li ◽

Shengyan Shang ◽

Yunpeng Wang ◽

...

Keyword(s):

Electrochemical Migration ◽

Migration Behavior

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Electrochemical migration behavior of Ag-plated Cu-filled electrically conductive adhesives

Rare Metals ◽

10.1007/s12598-012-0464-0 ◽

2012 ◽

Vol 31 (1) ◽

pp. 64-70 ◽

Cited By ~ 17

Author(s):

Xiaoyun Zhu ◽

Yuanlong Liu ◽

Jinming Long ◽

Xiaoli Liu

Keyword(s):

Electrochemical Migration ◽

Migration Behavior ◽

Conductive Adhesives ◽

Electrically Conductive ◽

Electrically Conductive Adhesives

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A comparison of the Cu electrochemical migration behavior between Cu lines with 5 um L/S realized by conventional Semi Additive Process (SAP) and an innovative Excimer Laser Damascene Process

International Symposium on Microelectronics ◽

10.4071/2380-4505-2018.1.000140 ◽

2018 ◽

Vol 2018 (1) ◽

pp. 000140-000145 ◽

Cited By ~ 1

Author(s):

Robert Gernhardt ◽

Friedrich Müller ◽

Markus Woehrmann ◽

Habib Hichri ◽

Karin Hauck ◽

...

Keyword(s):

Excimer Laser ◽

Stress Test ◽

Chemical Mechanical Planarization ◽

Electrochemical Migration ◽

Migration Behavior ◽

Additive Process ◽

Interdigital Capacitor ◽

Damascene Process ◽

Accelerated Stress Test ◽

Cu Migration

Abstract The technological evolution regarding multi-chip integrated Fan-Out packages and chip scale packages (CSPs) with high amounts of I/O demands for even higher routing densities. Conventional used technologies and materials like mask aligner and photosensitive polymers used for semi additive process (SAP) in the BEOL have reached its limits to push the resolution down to two um. New materials and technologies are necessary to overcome these limits. As the routing density increases, so does the reliability requirements. The electrochemical migration between Cu lines cannot be neglected and need to be analyzed as the distance between the Cu lines is decreasing. A new approach for fine-line multi redistribution layers (RDL) realized by an excimer laser dual damascene process was presented in the past, using laser ablation and Cu chemical mechanical planarization (CMP) to realize embedded Cu lines. This approach has several advantages regarding the processing but one of the most important characteristics of the damascene approach is the improved electrochemical migration behavior. The Cu lines are partially cladded by the Ti part of the seed layer due to the way of processing. The Ti acts as a barrier layer and inhibits the Cu migration into the surrounding polymer. RDL structures realized by conventional SAP have Ti only under and not between the Cu lines. In this study different test samples with interdigital structures (resp. interdigital capacitor IDC) with five um line and space width (L/S) were realized to analyze the electrochemical migration behavior between the fingers of the IDC. The samples were realized by SAP and by the excimer laser damascene process and were subsequently tested by the temperature humidity bias (THB) test resp. biased High Accelerated Stress Test (bHAST). With the help of this work, we were able to compare the reliability of both process variants and to demonstrate and prove the reliability of embedded copper lines realized by the excimer laser damascene process.

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