Effect of Ga ion doping in the ZnS passivation layer for high-efficiency quantum dot-sensitized solar cells

2021 ◽  
pp. 162910
Author(s):  
Shuang’an Liu ◽  
Lidong Li ◽  
Ying Cao ◽  
Rao Fan ◽  
Peng Sun ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Efficiency ◽  
Passivation Layer ◽  
Ion Doping ◽  
Sensitized Solar Cells

ZnSxSe1–x Alloy Passivation Layer for High-Efficiency Quantum-Dot-Sensitized Solar Cells

2019 ◽  
Vol 11 (44) ◽  
pp. 41415-41423 ◽  
Author(s):  
Linlin Zhang ◽  
Huashang Rao ◽  
Zhenxiao Pan ◽  
Xinhua Zhong
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Efficiency ◽  
Passivation Layer ◽  
Sensitized Solar Cells

A ZnS and metal hydroxide composite passivation layer for recombination control in high efficiency quantum dot sensitized solar cells

2016 ◽  
Vol 4 (48) ◽  
pp. 18976-18982 ◽  
Author(s):  
Zhenxiao Pan ◽  
Xinhua Zhong
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Efficiency ◽  
Charge Recombination ◽  
Metal Hydroxide ◽  
Passivation Layer ◽  
Sensitized Solar Cells

An effective composite passivation layer was developed for suppressing charge recombination and improving the performance of QDSCs.

Phosphating passivation layer for quantum dot sensitized solar cells

2021 ◽  
Vol 727 ◽  
pp. 138678
Author(s):  
Mei Xin Chen ◽  
Ya Qian Bai ◽  
Xin Na Guan ◽  
Jia Wei Chen ◽  
Jing Hui Zeng
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Passivation Layer ◽  
Sensitized Solar Cells

ZnO nanorods decorated with metal sulfides as stable and efficient counter-electrode materials for high-efficiency quantum dot-sensitized solar cells

2016 ◽  
Vol 4 (21) ◽  
pp. 8161-8171 ◽  
Author(s):  
Chandu V. V. M. Gopi ◽  
Mallineni Venkata-Haritha ◽  
Young-Seok Lee ◽  
Hee-Je Kim
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Counter Electrode ◽  
Electrode Materials ◽  
High Efficiency ◽  
Zno Nanorods ◽  
Metal Sulfide ◽  
Metal Sulfides ◽  
Sensitized Solar Cells

Metal sulfide decorated with ZnO NRs (ZnO/CoS, ZnO/NiS, ZnO/CuS and ZnO/PbS) were fabricated and used as efficient CEs for QDSSCs.

High efficiency CdS quantum-dot-sensitized solar cells with boron and nitrogen co-doped TiO2 nanofilm as effective photoanode

2015 ◽  
Vol 169 ◽  
pp. 103-108 ◽  
Author(s):  
Ling Li ◽  
Junying Xiao ◽  
Xichuan Yang ◽  
Wenming Zhang ◽  
Huayan Zhang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Efficiency ◽  
Doped Tio2 ◽  
Cds Quantum Dot ◽  
Sensitized Solar Cells ◽  
Co Doped

Quantum-dot-sensitized Solar Cells with Metal Electrodes

2014 ◽  
Vol 17 (1) ◽  
Author(s):  
Stavroula Sfaelou ◽  
Vassilios Dracopoulos ◽  
Panagiotis Lianos
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Tin Oxide ◽  
Passivation Layer ◽  
Metal Electrodes ◽  
Nanocrystalline Titania ◽  
Anode Electrode ◽  
Sensitized Solar Cells

AbstractQuantum dot sensitized solar cells have been made by using nanocrystalline titania as photocatalyst, sensitized in the Visible by a combination of quantum dot sensitizers: first a layer of CdS, followed by deposition of CdSe and finally a passivation layer of ZnS on the top. An inox grid was used as anode electrode and its functionality was compared with that of transparent fluorine-doped tin oxide (FTO) electrodes. Cu

scholarly journals ZnS/SiO2 Passivation Layer for High-Performance of TiO2/CuInS2 Quantum Dot Sensitized Solar Cells

Energies ◽  
2018 ◽  
Vol 11 (8) ◽  
pp. 1931
Author(s):  
Hee-Je Kim ◽  
Jin-Ho Bae ◽  
Hyunwoong Seo ◽  
Masaharu Shiratani ◽  
Chandu Venkata Veera Muralee Gopi
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Performance ◽  
Open Circuit Voltage ◽  
Charge Recombination ◽  
Open Circuit ◽  
Passivation Layer ◽  
Voltage Decay ◽  
Sensitized Solar Cells ◽  
Η Value

Suppressing the charge recombination at the interface of photoanode/electrolyte is the crucial way to improve the quantum dot sensitized solar cells (QDSSCs) performance. In this scenario, ZnS/SiO2 blocking layer was deposited on TiO2/CuInS2 QDs to inhibit the charge recombination at photoanode/electrolyte interface. As a result, the TiO2/CuInS2/ZnS/SiO2 based QDSSCs delivers a power conversion efficiency (η) value of 4.63%, which is much higher than the TiO2/CuInS2 (2.15%) and TiO2/CuInS2/ZnS (3.23%) based QDSSCs. Impedance spectroscopy and open circuit voltage decay analyses indicate that ZnS/SiO2 passivation layer on TiO2/CuInS2 suppress the charge recombination at the interface of photoanode/electrolyte and enhance the electron lifetime.

High Efficiency Quantum Dot Sensitized Solar Cells Based on Direct Adsorption of Quantum Dots on Photoanodes

2017 ◽  
Vol 9 (27) ◽  
pp. 22549-22559 ◽  
Author(s):  
Wenran Wang ◽  
Guocan Jiang ◽  
Juan Yu ◽  
Wei Wang ◽  
Zhenxiao Pan ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
High Efficiency ◽  
Sensitized Solar Cells ◽  
Direct Adsorption
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