Determination of charge carrier concentration in doped nonpolar liquids by impedance spectroscopy in the presence of charge adsorption

2016 ◽  
Vol 469 ◽  
pp. 325-337 ◽  
Author(s):  
Benjamin A. Yezer ◽  
Aditya S. Khair ◽  
Paul J. Sides ◽  
Dennis C. Prieve
Keyword(s):  
Impedance Spectroscopy ◽  
Charge Carrier ◽  
Carrier Concentration ◽  
Charge Carrier Concentration ◽  
Nonpolar Liquids

scholarly journals Quantitative determination of the charge carrier concentration of ion implanted silicon by IR-near-field spectroscopy

2010 ◽  
Vol 18 (25) ◽  
pp. 26206 ◽  
Author(s):  
Rainer Jacob ◽  
Stephan Winnerl ◽  
Harald Schneider ◽  
Manfred Helm ◽  
Marc Tobias Wenzel ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Quantitative Determination ◽  
Carrier Concentration ◽  
Near Field ◽  
Charge Carrier Concentration ◽  
Field Spectroscopy ◽  
Ion Implanted

Determination of the charge carrier concentration and mobility in n-gap by Raman spectroscopy

1983 ◽  
Vol 119 (2) ◽  
pp. 595-603 ◽  
Author(s):  
G. Irmer ◽  
V. V. Toporov ◽  
B. H. Bairamov ◽  
J. Monecke
Keyword(s):  
Raman Spectroscopy ◽  
Charge Carrier ◽  
Carrier Concentration ◽  
Charge Carrier Concentration

Determination of charge carrier concentration in n- and p-doped SiC based on optical absorption measurements

2002 ◽  
Vol 80 (1) ◽  
pp. 70-72 ◽  
Author(s):  
R. Weingärtner ◽  
P. J. Wellmann ◽  
M. Bickermann ◽  
D. Hofmann ◽  
T. L. Straubinger ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Charge Carrier ◽  
Carrier Concentration ◽  
Charge Carrier Concentration ◽  
Absorption Measurements

Determination of charge carrier concentration from low-field electroreflectance spectra

1977 ◽  
Vol 42 (2) ◽  
pp. 629-637 ◽  
Author(s):  
R. Wolf ◽  
W. Kühn ◽  
R. Enderlein ◽  
H. Lange
Keyword(s):  
Charge Carrier ◽  
Carrier Concentration ◽  
Charge Carrier Concentration ◽  
Low Field

Photoluminescence-Topography of the p-Type Doped SiC Wafers for Determination of Doping Inhomogeneity

2009 ◽  
Vol 615-617 ◽  
pp. 259-262
Author(s):  
Felix Oehlschläger ◽  
Sandrine Juillaguet ◽  
Hervé Peyre ◽  
Jean Camassel ◽  
Peter J. Wellmann
Keyword(s):  
Low Temperature ◽  
Charge Carrier ◽  
Carrier Concentration ◽  
Charge Carrier Concentration ◽  
Powerful Method ◽  
Carrier Distribution ◽  
Pl Intensity ◽  
P Type ◽  
Non Destructive

Photoluminescence(PL)-topography is a powerful method to determine the charge carrier concentration of SiC-wafers. The following work describes the development of a PL-topography method for the determination of charge carrier distribution in p-type SiC and shows the correlation of PL-Intensity and charge carrier concentration. With this setup it is possible to characterize wafers up to a size of 2” at room- and low temperature in a non-destructive way.

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