Boron oxide encapsulated Bridgman growth of high-purity high-resistivity cadmium telluride crystals

ABSTRACTOhmic and rectifying contacts on high resistivity etched P-type cadmium telluride have been studied in order to produce diode structures.For this,we have first investigated the properties of gold contacts obtained by chemical reactions of CdTe dippedin gold chloride.Both electrical characterization and structure have been analyzed as a function of the experimental conditions of the contact deposition.The results can be interpreted in terms of a current flow enhanced by tunnelling through the Au-CdTe junction and related to the structure of the interface a few tens of nanometer below the gold contact. In addition,several rectifying contacts have been investigated , in order to achieve a structure having low leakage current.

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Asymmetrical bridgman growth technique for larger and better quality mercury cadmium telluride crystals

Journal of Crystal Growth ◽

10.1016/0022-0248(89)90036-5 ◽

1989 ◽

Vol 94 (2) ◽

pp. 561-564 ◽

Cited By ~ 16

Author(s):

R.K. Bagai ◽

W.N. Borle

Keyword(s):

Cadmium Telluride ◽

Mercury Cadmium Telluride ◽

Bridgman Growth ◽

Growth Technique

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Characterization of Intrinsic Defects in High-Purity High-Resistivity p-Type 6H-SiC

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.7052 ◽

2008 ◽

Vol 47 (9) ◽

pp. 7052-7055 ◽

Cited By ~ 3

Author(s):

Hideharu Matsuura ◽

Hirokazu Yanase ◽

Miyuki Takahashi

Keyword(s):

High Purity ◽

High Resistivity ◽

Intrinsic Defects ◽

P Type

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Undoped high‐resistivity cadmium telluride for nuclear radiation detectors

Journal of Applied Physics ◽

10.1063/1.1663661 ◽

1974 ◽

Vol 45 (6) ◽

pp. 2759-2765 ◽

Cited By ~ 115

Author(s):

R. Triboulet ◽

Y. Marfaing ◽

A. Cornet ◽

P. Siffert

Keyword(s):

Cadmium Telluride ◽

Radiation Detectors ◽

Nuclear Radiation ◽

High Resistivity ◽

Nuclear Radiation Detectors

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Photoresponse of high resistivity cadmium telluride between room temperature and 400°C

Journal of Electronic Materials ◽

10.1007/bf02654550 ◽

1974 ◽

Vol 3 (1) ◽

pp. 155-170 ◽

Cited By ~ 4

Author(s):

R. Farrell ◽

G. Entine ◽

F. Wilson ◽

F. V. Wald

Keyword(s):

Cadmium Telluride ◽

Room Temperature ◽

High Resistivity

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Technology computer aided design based deep level transient spectra: Simulation of high-purity germanium crystals

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/ac34ad ◽

2021 ◽

Author(s):

Johan Lauwaert

Keyword(s):

High Purity ◽

Computer Aided Design ◽

Deep Level ◽

High Resistivity ◽

High Purity Germanium ◽

Computer Aided ◽

Transient Spectra ◽

Transient Spectroscopy ◽

Aided Design ◽

Dlts Spectra

Abstract Very often Deep Level Transient Spectroscopy (DLTS) specimens deviate from ideal textbook examples making the interpretation of spectra a huge challenge. This challenge introduces inaccurate estimates of the emission signatures and the lack of appropriate estimates for the concentrations of the observed trap levels. In this work it is shown with the example of high-purity germanium that Technology computer aided design including symbolic differentiation provides the necessary numerical stability over a wide temperature range to model DLTS spectra. Moreover this high-purity germanium is a quasi intrinsic semiconductor for which it is well-known that the original small signal theory can introduce strong errors. It is furthermore shown that the parasitic impact of fractional filling and high resistivity material can be modelled and that these modelled spectra can in the future assist the interpretation of experimental results.

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