Technology computer aided design based deep level transient spectra: Simulation of high-purity germanium crystals

Very often Deep Level Transient Spectroscopy (DLTS) specimens deviate from ideal textbook examples making the interpretation of spectra a huge challenge. This challenge introduces inaccurate estimates of the emission signatures and the lack of appropriate estimates for the concentrations of the observed trap levels. In this work it is shown with the example of high-purity germanium that Technology computer aided design including symbolic differentiation provides the necessary numerical stability over a wide temperature range to model DLTS spectra. Moreover this high-purity germanium is a quasi intrinsic semiconductor for which it is well-known that the original small signal theory can introduce strong errors. It is furthermore shown that the parasitic impact of fractional filling and high resistivity material can be modelled and that these modelled spectra can in the future assist the interpretation of experimental results.

Driven Qubit by Train of Gaussian-Pulses

The simplest non-dissipative 2-level atom system, a qubit, excited by a train of resonant n-Gaussian laser pulses is investigated. This concerns examination of the averaged atomic variables, the intensity-intensity correlation function, and the transient fluorescent radiation. Analytical formulas for the above expressions are obtained. Computational results show that the transient spectra with the initial ground and coherent atomic states exhibit asymmetric Mollow structure with dip structure, dense oscillation, and narrowing, and depends on the pulse number (n), the repetition time (τR), and the observed time.

Layer-resolved ultrafast extreme ultraviolet measurement of hole transport in a Ni-TiO2-Si photoanode

Metal oxide semiconductor junctions are central to most electronic and optoelectronic devices, but ultrafast measurements of carrier transport have been limited to device-average measurements. Here, charge transport and recombination kinetics in each layer of a Ni-TiO2-Si junction is measured using the element specificity of broadband extreme ultraviolet (XUV) ultrafast pulses. After silicon photoexcitation, holes are inferred to transport from Si to Ni ballistically in ~100 fs, resulting in characteristic spectral shifts in the XUV edges. Meanwhile, the electrons remain on Si. After picoseconds, the transient hole population on Ni is observed to back-diffuse through the TiO2, shifting the Ti spectrum to a higher oxidation state, followed by electron-hole recombination at the Si-TiO2 interface and in the Si bulk. Electrical properties, such as the hole diffusion constant in TiO2 and the initial hole mobility in Si, are fit from these transient spectra and match well with values reported previously.

Probing the Birth and Dynamics of Hydrated Electrons at the Gold/Liquid Water Interface via a Novel Optoelectronic Approach

<p>The hydrated electron has fundamental and practical significance in radiation and radical chemistry, catalysis and radiobiology. While its bulk properties have been extensively studied, its behavior at buried solid/liquid interfaces is still unclear due to the lack of effective tools to characterize this short-lived species in between two condensed matter layers. In this study, we develop a novel optoelectronic technique for the characterization of the birth and structural evolution of solvated electrons at the metal/liquid interface with a femtosecond time resolution. We thus recorded for the first time their transient spectra (in a photon energy range from 0.31 to 1.85 eV) <i>in situ</i><i> </i>with a time resolution of 50 fs. The transient species show state-dependent optical transition behaviors from being isotropic in the hot state to perpendicular to the surface in the trapped and solvated states. The technique will enable a better understanding of hot electron-driven reactions at electrochemical interfaces.</p>

Probing the Birth and Dynamics of Hydrated Electrons at the Gold/Liquid Water Interface via a Novel Optoelectronic Approach

<p>The hydrated electron has fundamental and practical significance in radiation and radical chemistry, catalysis and radiobiology. While its bulk properties have been extensively studied, its behavior at buried solid/liquid interfaces is still unclear due to the lack of effective tools to characterize this short-lived species in between two condensed matter layers. In this study, we develop a novel optoelectronic technique for the characterization of the birth and structural evolution of solvated electrons at the metal/liquid interface with a femtosecond time resolution. We thus recorded for the first time their transient spectra (in a photon energy range from 0.31 to 1.85 eV) <i>in situ</i><i> </i>with a time resolution of 50 fs. The transient species show state-dependent optical transition behaviors from being isotropic in the hot state to perpendicular to the surface in the trapped and solvated states. The technique will enable a better understanding of hot electron-driven reactions at electrochemical interfaces.</p>

UV-photochemistry of the biologically relevant thiol group and the disulfide bond: Evolution of early photoproducts from picosecond X-ray absorption spectroscopy at the sulfur K-Edge

We report on the UV-induced photochemistry of the biologically relevant sulfur-containing thiol group and the disulfide bond in solution using picosecond X-ray absorption spectroscopy at the sulfur K-edge. This study provides element-specific insight into the 267-nm induced photo-chemistry of two model compounds, an aromatic thiol and an aliphatic disulfide. Our transient spectra point to two primary and several secondary photoproducts, and our analysis may aid in understanding UV damage in proteins.