Numerical investigation of crucible rotation effect on crystallization rate behavior during Czochralski growth of Si1−xGex crystals

2006 ◽  
Vol 287 (2) ◽  
pp. 281-286 ◽  
Author(s):  
O.V. Smirnova ◽  
V.V. Kalaev ◽  
Yu.N. Makarov ◽  
N.V. Abrosimov ◽  
H. Riemann
Keyword(s):  
Numerical Investigation ◽  
Crystallization Rate ◽  
Czochralski Growth ◽  
Rotation Effect ◽  
Rate Behavior ◽  
Crucible Rotation

Effect of the pulling, crystal and crucible rotation rate on the thermal stress and the melt–crystal interface in the Czochralski growth of germanium crystals

CrystEngComm ◽  
2021 ◽  
Vol 23 (39) ◽  
pp. 6967-6976
Author(s):  
Mahboobeh Saadatirad ◽  
Mohammad Hossein Tavakoli ◽  
Hossein Khodamoradi ◽  
Seyedeh Razieh Masharian
Keyword(s):  
Thermal Stress ◽  
Rotation Rate ◽  
Czochralski Growth ◽  
Interface Shape ◽  
Crucible Rotation ◽  
Crystal Interface

The effect of the pulling rate on the melt–crystal interface shape and melt streamline is investigated.

Modeling the effect of crystal and crucible rotation on the interface shape in Czochralski growth of piezoelectric langatate crystals

2017 ◽  
Vol 475 ◽  
pp. 368-377 ◽  
Author(s):  
C. Stelian ◽  
A. Nehari ◽  
I. Lasloudji ◽  
K. Lebbou ◽  
M. Dumortier ◽  
...  
Keyword(s):  
Czochralski Growth ◽  
Interface Shape ◽  
Crucible Rotation

Magnetic Control of Transport Phenomena in CZ Crystal Growth Processes

2001 ◽  
Author(s):  
M. Gunzburger ◽  
E. Ozugurlu ◽  
J. Turner ◽  
H. Zhang
Keyword(s):  
Crystal Growth ◽  
Axial Magnetic Field ◽  
Mathematical Formulation ◽  
Computational Techniques ◽  
Control Parameters ◽  
Czochralski Growth ◽  
Design Strategies ◽  
Growth Processes ◽  
Rotation Rates ◽  
Crucible Rotation

Abstract Magnetic fields have been widely used in industry to enhance the performance of crystal growth processes. However, no attempts have been made at applying optimization strategies to effect optimal enhancements. Here, a mathematical formulation and computational techniques are presented to describe optimal control and design strategies for the suppression of turbulent motions in the melt and the minimization of temperature gradients in the crystal in Czochralski crystal growth processes. It is shown that an axial magnetic field can effectively suppress convection in Czochralski growth of silicon. Other control parameters such as crystal and crucible rotation rates are found to be less effective.

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