Modeling the effect of crystal and crucible rotation on the interface shape in Czochralski growth of piezoelectric langatate crystals

2017 ◽  
Vol 475 ◽  
pp. 368-377 ◽  
Author(s):  
C. Stelian ◽  
A. Nehari ◽  
I. Lasloudji ◽  
K. Lebbou ◽  
M. Dumortier ◽  
...  
Keyword(s):  
Czochralski Growth ◽  
Interface Shape ◽  
Crucible Rotation

Effect of the pulling, crystal and crucible rotation rate on the thermal stress and the melt–crystal interface in the Czochralski growth of germanium crystals

CrystEngComm ◽  
2021 ◽  
Vol 23 (39) ◽  
pp. 6967-6976
Author(s):  
Mahboobeh Saadatirad ◽  
Mohammad Hossein Tavakoli ◽  
Hossein Khodamoradi ◽  
Seyedeh Razieh Masharian
Keyword(s):  
Thermal Stress ◽  
Rotation Rate ◽  
Czochralski Growth ◽  
Interface Shape ◽  
Crucible Rotation ◽  
Crystal Interface

The effect of the pulling rate on the melt–crystal interface shape and melt streamline is investigated.

Numerical Study of the Effect of Magnetic Fields on Melt-Crystal Interface-Deflection in Czochralski Crystal Growth

2003 ◽  
Author(s):  
Lijun Liu ◽  
Koichi Kakimoto
Keyword(s):  
Magnetic Field ◽  
Magnetic Fields ◽  
Numerical Study ◽  
Silicon Crystal ◽  
Czochralski Growth ◽  
Thermal Flow ◽  
Interface Shape ◽  
Convective Thermal ◽  
And Control ◽  
Crystal Interface

In order to control the impurity distribution and remove defects in a crystal grown in Czochralski growth for high quality crystals of silicon, it is necessary to study and control the melt-crystal interface shape, which plays an important role in control of the crystal quality. The melt-crystal interface interacts with and is determined by the convective thermal flow of the melt in the crucible. Application of magnetic field in the Czochralski system is an effective tool to control the convective thermal flow in the crucible. Therefore, the shape of the melt-crystal interface can be modified accordingly. Numerical study is performed in this paper to understand the effect of magnetic field on the interface deflection in Czochralski system. Comparisons have been carried out by computations for four arrangements of the magnetic field: without magnetic field, a vertical magnetic field and two types of cusp-shaped magnetic field. The velocity, pressure, thermal and electromagnetic fields are solved with adaptation of the mesh to the iteratively modified interface shape. The multi-block technique is applied to discretize the melt field in the crucible and the solid field of silicon crystal. The unknown shape of the melt-crystal interface is achieved by an iterative procedure. The computation results show that the magnetic fields have obvious effects on both the pattern and strength of the convective flow and the interface shape. Applying magnetic field in the Czochralski system, therefore, is an effective tool to control the quality of bulk crystal in Czochralski growth process.

Time‐dependent crystal‐melt interface shape in Czochralski growth system

1976 ◽  
Vol 47 (12) ◽  
pp. 5191-5194
Author(s):  
J. Arkani‐Hamed ◽  
M. J. Heshmati Moulaii ◽  
S. Vojdani
Keyword(s):  
Time Dependent ◽  
Czochralski Growth ◽  
Interface Shape ◽  
Growth System

Magnetic Control of Transport Phenomena in CZ Crystal Growth Processes

2001 ◽  
Author(s):  
M. Gunzburger ◽  
E. Ozugurlu ◽  
J. Turner ◽  
H. Zhang
Keyword(s):  
Crystal Growth ◽  
Axial Magnetic Field ◽  
Mathematical Formulation ◽  
Computational Techniques ◽  
Control Parameters ◽  
Czochralski Growth ◽  
Design Strategies ◽  
Growth Processes ◽  
Rotation Rates ◽  
Crucible Rotation

Abstract Magnetic fields have been widely used in industry to enhance the performance of crystal growth processes. However, no attempts have been made at applying optimization strategies to effect optimal enhancements. Here, a mathematical formulation and computational techniques are presented to describe optimal control and design strategies for the suppression of turbulent motions in the melt and the minimization of temperature gradients in the crystal in Czochralski crystal growth processes. It is shown that an axial magnetic field can effectively suppress convection in Czochralski growth of silicon. Other control parameters such as crystal and crucible rotation rates are found to be less effective.

Interface shape transitions in the Czochralski growth of Dy3Al5O12

1978 ◽  
Vol 43 (4) ◽  
pp. 541-542 ◽  
Author(s):  
Y. Miyazawa ◽  
M. Mori ◽  
S. Honma
Keyword(s):  
Czochralski Growth ◽  
Interface Shape ◽  
Shape Transitions
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