Molecular beam epitaxial growth and characteristics of ultra-low threshold 1.45μm metamorphic InAs quantum dot lasers on GaAs
2007 ◽
Vol 301-302
◽
pp. 923-926
◽
2008 ◽
Vol 40
(6)
◽
pp. 1794-1796
◽
2007 ◽
Vol 46
(4B)
◽
pp. 2418-2420
◽
Keyword(s):
1997 ◽
Vol 175-176
◽
pp. 945-947
◽
2014 ◽
1997 ◽
Vol 175-176
◽
pp. 883-887
◽