A calibration method for group V fluxes and impact of V/III flux ratio on the growth of InAs/InAsSb type-II superlattices by molecular beam epitaxy

2013 ◽  
Vol 378 ◽  
pp. 145-149 ◽  
Author(s):  
Hua Li ◽  
Shi Liu ◽  
Oray O. Cellek ◽  
Ding Ding ◽  
Xiao-Meng Shen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Calibration Method ◽  
Type Ii ◽  
Group V ◽  
Type Ii Superlattices

Growth of InAs/GaSb type-II superlattices by gas-source molecular-beam epitaxy

2009 ◽  
Vol 311 (7) ◽  
pp. 1703-1706 ◽  
Author(s):  
J. Li ◽  
Q. Gong ◽  
S.G. Li ◽  
A.Z. Li ◽  
C. Lin
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Type Ii ◽  
Gas Source ◽  
Type Ii Superlattices

Interface design and properties in InAs/GaSb type-II superlattices grown by molecular beam epitaxy

2013 ◽  
Author(s):  
Zhicheng Xu ◽  
Jianxin Chen ◽  
Fangfang Wang ◽  
Yi Zhou ◽  
Qingqing Xu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Interface Design ◽  
Molecular Beam ◽  
Type Ii ◽  
Type Ii Superlattices

Effect of group V/III flux ratio on deep electron traps in AlxGa1−xAs (x=0.7) grown by molecular beam epitaxy

1986 ◽  
Vol 49 (13) ◽  
pp. 788-790 ◽  
Author(s):  
T. Hayakawa ◽  
M. Kondo ◽  
T. Suyama ◽  
K. Takahashi ◽  
S. Yamamoto ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Group V ◽  
Electron Traps

Effect of Group V/III Flux Ratio on Lightly Si‐Doped Al x Ga1 − x As Grown by Molecular Beam Epitaxy

1984 ◽  
Vol 131 (11) ◽  
pp. 2630-2633 ◽  
Author(s):  
Y. Nomura ◽  
M. Mannoh ◽  
M. Mihara ◽  
S. Naritsuka ◽  
K. Yamanaka ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Group V ◽  
Si Doped

Effect of group V/III flux ratio on the reliability of GaAs/Al0.3Ga0.7As laser diodes prepared by molecular beam epitaxy

1988 ◽  
Vol 52 (4) ◽  
pp. 252-254 ◽  
Author(s):  
T. Hayakawa ◽  
K. Takahashi ◽  
T. Suyama ◽  
M. Kondo ◽  
S. Yamamoto ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Flux Ratio ◽  
Group V

Interface layer control and optimization of InAs/GaSb type-II superlattices grown by molecular beam epitaxy

2014 ◽  
Vol 386 ◽  
pp. 220-225 ◽  
Author(s):  
Zhicheng Xu ◽  
Jianxin Chen ◽  
Fangfang Wang ◽  
Yi Zhou ◽  
Chuan Jin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Interface Layer ◽  
Type Ii ◽  
Type Ii Superlattices ◽  
Layer Control

Evaluation of antimony segregation in InAs/InAs1−xSbx type-II superlattices grown by molecular beam epitaxy

2016 ◽  
Vol 119 (9) ◽  
pp. 095702 ◽  
Author(s):  
Jing Lu ◽  
Esperanza Luna ◽  
Toshihiro Aoki ◽  
Elizabeth H. Steenbergen ◽  
Yong-Hang Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Type Ii ◽  
Type Ii Superlattices
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