Nitrogen doping of 4H–SiC by the top-seeded solution growth technique using Si–Ti solvent

2014 ◽  
Vol 392 ◽  
pp. 60-65 ◽  
Author(s):  
Kazuhiko Kusunoki ◽  
Kazuhito Kamei ◽  
Kazuaki Seki ◽  
Shunta Harada ◽  
Toru Ujihara
1987 ◽  
Vol 99 ◽  
Author(s):  
P. J. Picone ◽  
H. P. Jenssen ◽  
D. R. Gabbe ◽  
H. L. Tuller

ABSTRACTSingle crystals of pure and Sr doped La2CuO4 have been grown with a top seeded solution growth technique. Crystals grown from a lithium borate flux incorporate impurities detrimental to superconductive properties while those grown from excess copper oxide are free from this difficulty.


2018 ◽  
Vol 924 ◽  
pp. 31-34 ◽  
Author(s):  
Kazuhiko Kusunoki ◽  
Kazuaki Seki ◽  
Yutaka Kishida ◽  
Hiroshi Kaido ◽  
Koji Moriguchi ◽  
...  

This study reports our newly developed technology for SiC solution growth. In particular, we succeed in completely suppressing solvent inclusions, which have been a serious technological problem peculiar to the solution growth method. Then, we fabricate two-inch-diameter 4° off-axis SiC wafers without solvent inclusions. Moreover, we performed their crystal defects evaluation. It was found that our wafers were low resistance n-type 4H-SiC and contain almost no basal plane dislocation. As a result, the superior quality of our solution-grown crystal was confirmed.


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