A modified vacuum directional solidification system of multicrystalline silicon based on optimizing for heat transfer

The content and uniformity of impurities and precipitates have an important role in the efficiency of solar cells made of multicrystalline silicon. We developed a transient global model of heat and mass transfer for directional solidification for multicrystalline silicon and a dynamic model of SiC particles and silicon nitride precipitation in molten silicon based phase diagrams. Computations were carried out to clarify the distributions of carbon, nitrogen and oxygen based on segregation and the particle formation in molten silicon during a directional solidification process. It was shown that the content of SiC precipitated in solidified ingots increases as a function of the fraction solidified. It was also clarified from the results that Si2N2O was first formed near the melt-crystal interface, since oxygen concentration in the melt decreases and nitrogen concentration in the melt increases with solidification of the molten silicon. Si3N4 was formed after Si2N2O had been formed.

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Effect of Heat Transfer during the Vacuum Directional Solidification Process on the Crystal Quality of Multicrystalline Silicon

Metallurgical and Materials Transactions E ◽

10.1007/s40553-015-0042-0 ◽

2015 ◽

Vol 2 (1) ◽

pp. 39-49 ◽

Cited By ~ 1

Author(s):

Xi Yang ◽

Wenhui Ma ◽

Guoqiang Lv ◽

Kuixian Wei ◽

Cong Zhang ◽

...

Keyword(s):

Heat Transfer ◽

Directional Solidification ◽

Solidification Process ◽

Crystal Quality ◽

Multicrystalline Silicon ◽

Directional Solidification Process

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Optimization of crystal quality by improving heat transfer properties of titanium carbide retort in the directional solidification

10.1063/5.0018439 ◽

2020 ◽

Author(s):

V. Kesavan ◽

M. Srinivasan ◽

P. Ramasamy

Keyword(s):

Heat Transfer ◽

Titanium Carbide ◽

Directional Solidification ◽

Crystal Quality ◽

Transfer Properties

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Study of SiC and Si3N4 inclusions in industrial multicrystalline silicon ingots grown by directional solidification method

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2010.10.019 ◽

2010 ◽

Vol 13 (4) ◽

pp. 231-238 ◽

Cited By ~ 22

Author(s):

Nan Chen ◽

Bingfa Liu ◽

Shenyu Qiu ◽

Guihua Liu ◽

Guoping Du

Keyword(s):

Directional Solidification ◽

Multicrystalline Silicon

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Heat transfer in an industrial directional solidification furnace with multi-heaters for silicon ingots

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2013.01.053 ◽

2014 ◽

Vol 385 ◽

pp. 9-15 ◽

Cited By ~ 23

Author(s):

Zaoyang Li ◽

Lijun Liu ◽

Xin Liu ◽

Yunfeng Zhang ◽

Jingfeng Xiong

Keyword(s):

Heat Transfer ◽

Directional Solidification ◽

Solidification Furnace

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Growth and characterization of 240kg multicrystalline silicon ingot grown by directional solidification

Solar Energy Materials and Solar Cells ◽

10.1016/j.solmat.2003.11.020 ◽

2004 ◽

Vol 81 (2) ◽

pp. 217-224 ◽

Cited By ~ 25

Author(s):

J Kim

Keyword(s):

Directional Solidification ◽

Multicrystalline Silicon ◽

Silicon Ingot

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Estimation of Interfacial Heat Transfer Coefficient for Horizontal Directional Solidification of Sn-5 wt%Pb Alloy Using Genetic Algorithm as Inverse Method

Advances in Intelligent Systems and Computing - Soft Computing for Problem Solving ◽

10.1007/978-981-13-1592-3_35 ◽

2018 ◽

pp. 447-459

Author(s):

P. S. Vishweshwara ◽

N. Gnanasekaran ◽

M. Arun

Keyword(s):

Heat Transfer ◽

Genetic Algorithm ◽

Heat Transfer Coefficient ◽

Transfer Coefficient ◽

Directional Solidification ◽

Inverse Method ◽

Interfacial Heat Transfer Coefficient ◽

Interfacial Heat Transfer

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Optimization of Bulk Hgcdte Growth in a Directional Solidification Furnace by Numerical Simulation

MRS Proceedings ◽

10.1557/proc-398-139 ◽

1995 ◽

Vol 398 ◽

Cited By ~ 1

Author(s):

A.V. Bune ◽

D.C. Gillies ◽

S.L. Lehoczky

Keyword(s):

Heat Transfer ◽

Numerical Simulation ◽

Finite Element ◽

Crystal Growth ◽

Numerical Model ◽

Directional Solidification ◽

Growth Conditions ◽

Finite Element Code ◽

Interface Shape ◽

Solidification Furnace

ABSTRACTA numerical model of heat transfer by combined conduction, radiation and convection was developed using the FIDAP finite element code for NASA's Advanced Automated Directional Solidification Furnace (AADSF). The prediction of the temperature gradient in an ampoule with HgCdTe is a necessity for the evaluation of whether or not the temperature set points for furnace heaters and the details of cartridge design ensure optimal crystal growth conditions for this material and size of crystal. A prediction of crystal/melt interface shape and the flow patterns in HgCdTe are available using a separate complementary model.

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