Low-temperature growth of AlN and GaN by metal organic vapor phase epitaxy for polarization engineered water splitting photocathode

2017 ◽  
Vol 464 ◽  
pp. 180-184 ◽  
Author(s):  
Akihiro Nakamura ◽  
Michihiro Suzuki ◽  
Katsushi Fujii ◽  
Yoshiaki Nakano ◽  
Masakazu Sugiyama
Keyword(s):  
Low Temperature ◽  
Water Splitting ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Organic Vapor ◽  
Metal Organic

scholarly journals Study on electrical properties of n-GaN grown at low temperature by metal-organic vapor phase epitaxy

2008 ◽  
Vol 57 (9) ◽  
pp. 5923
Author(s):  
Wang Lai ◽  
Zhang Xian-Peng ◽  
Xi Guang-Yi ◽  
Zhao Wei ◽  
Li Hong-Tao ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

Low temperature growth of (100) HgCdTe layers with DtBTe in metalorganic vapor phase epitaxy

1995 ◽  
Vol 24 (9) ◽  
pp. 1093-1097 ◽  
Author(s):  
K. Yasuda ◽  
H. Hatano ◽  
T. Ferid ◽  
K. Kawamoto ◽  
T. Maejima ◽  
...  
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Temperature Growth ◽  
Low Temperature Growth

InGaAs/GaAsP superlattice solar cells with reduced carbon impurity grown by low-temperature metal-organic vapor phase epitaxy using triethylgallium

2014 ◽  
Vol 116 (20) ◽  
pp. 203101 ◽  
Author(s):  
Hiromasa Fujii ◽  
Kasidit Toprasertpong ◽  
Hassanet Sodabanlu ◽  
Kentaroh Watanabe ◽  
Masakazu Sugiyama ◽  
...  
Keyword(s):  
Solar Cells ◽  
Low Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Carbon Impurity ◽  
Organic Vapor ◽  
Metal Organic

Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates

2008 ◽  
Vol 310 (7-9) ◽  
pp. 2308-2313 ◽  
Author(s):  
Masataka Imura ◽  
Hiroki Sugimura ◽  
Narihito Okada ◽  
Motoaki Iwaya ◽  
Satoshi Kamiyama ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Temperature Growth ◽  
Organic Vapor ◽  
Metal Organic

On low temperature kinetic effects in metal–organic vapor phase epitaxy of III–V compounds

2001 ◽  
Vol 230 (1-2) ◽  
pp. 232-238 ◽  
Author(s):  
R.A. Talalaev ◽  
E.V. Yakovlev ◽  
S.Yu. Karpov ◽  
Yu.N. Makarov
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic ◽  
Kinetic Effects

Low Temperature Growth Mechanism of GaN Crystal by Hydride Vapor Phase Epitaxy

2003 ◽  
Vol 764 ◽  
Author(s):  
Hai-Ping Liu ◽  
In-Gann Chen ◽  
Jenq-Dar Tsay ◽  
Wen-Yueh Liu ◽  
Yih-Der Guo ◽  
...  
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Growth Mechanism ◽  
Growth Temperature ◽  
Vapor Phase Epitaxy ◽  
High Index ◽  
Hydride Vapor Phase Epitaxy ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Gan Crystal

AbstractThe low temperature growth of GaN crystal using epitaxy lateral overgrowth (ELO) on SiO2 dot pattern below 900°C by hydride vapor phase epitaxy (HVPE) have been studied. It is observed that the growth rate of GaN hexagonal pyramidal crystals along [1101] direction increases as growth temperature decreases. At low temperature of ∼ 850°C, hexagonal GaN columnar crystals with high index facet at the top can be observed. It is proposed that the surface diffusion length of precursors, such as NH3 and GaCl, decreases at lower temperature that reduces the probability of desorption and increase the lifetime. The condensation of Ga liquid droplets on the GaN surface will change the relative stability of {1101} facet. Therefore, the formation of high index planes such as {2122} facet on the top of hexagonal column along with the formation of stacking fault on the (0001) plane can be observed. A detailed study of the effect of growth temperature on the crystal growth mechanism will be presented.

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