Liquid phase growth of GaSe 1−x Te x mixed crystals by temperature difference method under controlled vapor pressure

2017 ◽  
Vol 467 ◽  
pp. 107-110 ◽  
Author(s):  
S. Zhao ◽  
Y. Sato ◽  
K. Maeda ◽  
T. Tanabe ◽  
H. Ohtani ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Vapor Pressure ◽  
Temperature Difference ◽  
Difference Method ◽  
Mixed Crystals ◽  
Phase Growth ◽  
Liquid Phase Growth

Thermoelectric Properties of Cu-Doped n-Type Bi2Te2.85Se0.15 Prepared by Liquid Phase Growth Using a Sliding Boat

2014 ◽  
Vol 44 (6) ◽  
pp. 1870-1875 ◽  
Author(s):  
Hiroyuki Kitagawa ◽  
Tsukasa Matsuura ◽  
Toshihito Kato ◽  
Kin-ya Kamata
Keyword(s):  
Liquid Phase ◽  
Thermoelectric Properties ◽  
Phase Growth ◽  
Liquid Phase Growth

Laser-activated gold catalysts for liquid-phase growth of cadmium selenide nanowires

2015 ◽  
Vol 51 (11) ◽  
pp. 2145-2148 ◽  
Author(s):  
C. Huang ◽  
J. Mao ◽  
X. M. Chen ◽  
J. Yang ◽  
X. W. Du
Keyword(s):  
Liquid Phase ◽  
Liquid Medium ◽  
Cadmium Selenide ◽  
Room Temperature ◽  
Gold Catalysts ◽  
Device Fabrication ◽  
Phase Growth ◽  
Liquid Phase Growth ◽  
Cdse Nanowires ◽  
Cadmium Selenide Nanowires

A laser-activated-catalyst (LAC) technique was developed to grow CdSe nanowires in liquid medium at room temperature. The LAC technique can achieve accurate positioning of nanowires, which is beneficial for device fabrication.

Growth mechanism during selective epitaxy of p-doped SiC using VLS transport

2012 ◽  
Vol 1433 ◽  
Author(s):  
D. Carole ◽  
A. Vo-Ha ◽  
M. Lazar ◽  
N. Thierry-Jebali ◽  
D. Tournier ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Epitaxial Growth ◽  
Growth Mechanism ◽  
Growth Temperature ◽  
Liquid Droplets ◽  
Growth Mechanisms ◽  
Phase Growth ◽  
Selective Epitaxial Growth ◽  
Standard Configuration ◽  
Liquid Phase Growth

ABSTRACTSince a few years, VLS transport is studied not only for homoepitaxial SiC growth but also for SiC selective epitaxial growth (SEG). In this approach, a stacking of silicon and aluminum layers is deposited on the substrate and patterns are created by photolithography. Upon melting, the Al-Si liquid droplets are fed by propane to obtain the SEG of p-doped SiC. In this work, the growth mechanisms were deeper investigated, in particular the influence of the carrier gas (H2 or Ar) and the growth temperature. SEG experiments showed higher growth rates than those measured in the standard configuration (nonselective growth). Moreover, the SiC layers exhibited step-bunched areas characteristic of liquid phase growth but also areas with morphological features due to a disruption of the step-bunching growth mode.

Confined Liquid-Phase Growth of Crystalline Compound Semiconductors on Any Substrate

ACS Nano ◽  
2018 ◽  
Vol 12 (6) ◽  
pp. 5158-5167 ◽  
Author(s):  
Debarghya Sarkar ◽  
Wei Wang ◽  
Matthew Mecklenburg ◽  
Andrew J. Clough ◽  
Matthew Yeung ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Compound Semiconductors ◽  
Crystalline Compound ◽  
Phase Growth ◽  
Liquid Phase Growth
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