Vacancy-type defects in bulk GaN grown by oxide vapor phase epitaxy probed using positron annihilation

2021 ◽  
pp. 126219
Author(s):  
Akira Uedono ◽  
Junichi Takino ◽  
Tomoaki Sumi ◽  
Yoshio Okayama ◽  
Masayuki Imanishi ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Bulk Gan ◽  
Oxide Vapor

Bulk Gan Crystal With Low Defect Density Grown By Hydride Vapor Phase Epitaxy

1997 ◽  
Vol 482 ◽  
Author(s):  
A. Usui
Keyword(s):  
Vapor Phase ◽  
Flat Surface ◽  
Defect Density ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Extended Defect ◽  
New Approach ◽  
Bulk Gan ◽  
Gan Crystal ◽  
Reflectance Measurements

AbstractA new approach to grow thick GaN layers by hydride vapor phase epitaxy (HVPE) is described. Selective growth is carried out at the beginning of growth. The coalescence of selectively grown facet structures makes it possible to achieve a flat surface over the entire substrate. As a result, crack-free GaN films with mirror-like surfaces are successfully grown even to a thickness of about 100 μm on a 2-inch-diameter sapphire substrate. The extended defect density is as low as 6×107 cm−2. The reduction mechanism for dislocation is discussed based on TEM observation. The high optical properties of FIELO GaN are confirmed by 5 K photoluminescence and reflectance measurements.

Growth and doping of bulk GaN by hydride vapor phase epitaxy

2020 ◽  
Vol 29 (2) ◽  
pp. 026104 ◽  
Author(s):  
Yu-Min Zhang ◽  
Jian-Feng Wang ◽  
De-Min Cai ◽  
Guo-Qiang Ren ◽  
Yu Xu ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Bulk Gan

Properties of Ge-doped, high-quality bulk GaN crystals fabricated by hydride vapor phase epitaxy

2010 ◽  
Vol 312 (24) ◽  
pp. 3569-3573 ◽  
Author(s):  
Yuichi Oshima ◽  
Takehiro Yoshida ◽  
Kazutoshi Watanabe ◽  
Tomoyoshi Mishima
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
High Quality ◽  
Bulk Gan

Lattice parameters of bulk GaN fabricated by halide vapor phase epitaxy

2008 ◽  
Vol 310 (5) ◽  
pp. 959-965 ◽  
Author(s):  
V. Darakchieva ◽  
B. Monemar ◽  
A. Usui ◽  
M. Saenger ◽  
M. Schubert
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Lattice Parameters ◽  
Bulk Gan

Dependence of polarity inversion on V/III ratio in −c-GaN growth by oxide vapor phase epitaxy

2016 ◽  
Vol 55 (5S) ◽  
pp. 05FA11 ◽  
Author(s):  
Yuki Taniyama ◽  
Yohei Yamaguchi ◽  
Hiroaki Takatsu ◽  
Tomoaki Sumi ◽  
Akira Kitamoto ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Polarity Inversion ◽  
Oxide Vapor

scholarly journals Hydride vapor phase epitaxy reactor for bulk GaN growth

2019 ◽  
Author(s):  
Vladislav Voronenkov ◽  
Natalia Bochkareva ◽  
Ruslan Gorbunov ◽  
Andrey Zubrilov ◽  
Viktor Kogotkov ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Bulk Gan

scholarly journals Optical properties of C-doped bulk GaN wafers grown by halide vapor phase epitaxy

2014 ◽  
Vol 116 (22) ◽  
pp. 223503 ◽  
Author(s):  
S. Khromov ◽  
C. Hemmingsson ◽  
B. Monemar ◽  
L. Hultman ◽  
G. Pozina
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Bulk Gan
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