Fabrication of porous silicon carbide ceramics with high porosity and high strength

2014 ◽  
Vol 34 (3) ◽  
pp. 837-840 ◽  
Author(s):  
Weiwu Chen ◽  
Yoshinari Miyamoto
Keyword(s):  
Silicon Carbide ◽  
Porous Silicon ◽  
High Strength ◽  
High Porosity ◽  
Porous Silicon Carbide ◽  
Carbide Ceramics ◽  
Silicon Carbide Ceramics

High-Strength Porous Silicon Carbide Ceramics by an Oxidation-Bonding Technique

2004 ◽  
Vol 85 (11) ◽  
pp. 2852-2854 ◽  
Author(s):  
Jihong She ◽  
Jian-Feng Yang ◽  
Naoki Kondo ◽  
Tatsuki Ohji ◽  
Shuzo Kanzaki ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Porous Silicon ◽  
High Strength ◽  
Porous Silicon Carbide ◽  
Carbide Ceramics ◽  
Silicon Carbide Ceramics ◽  
Bonding Technique

A Novel Method for the Preparation of Porous SiC

2009 ◽  
Vol 620-622 ◽  
pp. 773-776 ◽  
Author(s):  
Rong Zhen Liu ◽  
Bo Wang ◽  
Ji Kuan Cheng ◽  
Jian Feng Yang ◽  
Ji Qiang Gao
Keyword(s):  
Silicon Carbide ◽  
Porous Silicon ◽  
Porous Ceramics ◽  
Precursor Powder ◽  
Recrystallization Process ◽  
High Porosity ◽  
Porous Silicon Carbide ◽  
Novel Method ◽  
Carbide Ceramics ◽  
Silicon Carbide Ceramics

A novel method for preparing porous silicon carbide ceramics with high porosity had been developed by recrystallization of green bodies composed of α-SiC, β-SiC, remnant silicon and incompletely-reacted carbon. Fine microstructure and uniform pore structure of the resultant porous silicon carbide ceramics was obtained. The green bodies of porous ceramics were prepared by the precursor powder which contained α-SiC, carbon black and silicon powder. The precursor powder was sintered at 1600°C under Vacuum circumstance to obtain the green bodies; the sintering process is same with the reaction sintering silicon carbide. Then the green bodies were sintered to 2300°C for half an hour to recrystallization. The incompletely-reacted carbon was fully reacted with silicon. And the remnant silicon was excluded during the recrystallization process to create porous structures. The influence of composition of the precursor powder and the fabrication process (the moulding pressure) on the microstructure of sintering bodies was analyzed. X-ray diffractometry demonstrated the transformation of β-SiC to α-SiC during the recrystallization process. The density and the porosity of this material was 1.027g/cm3 and 67% respectively.

The thermoelectric performance of silicon carbide semiconductor made from rice hull

1995 ◽  
Vol 410 ◽  
Author(s):  
E. Maed A ◽  
M. Komatsu
Keyword(s):  
Silicon Carbide ◽  
Porous Silicon ◽  
Thermoelectric Properties ◽  
Rice Hull ◽  
Nitrogen Gas ◽  
Porous Silicon Carbide ◽  
Thermoelectromotive Force ◽  
Type Semiconductor ◽  
Carbide Ceramics ◽  
Silicon Carbide Ceramics

ABSTRACTThermoelectric properties (Thermoelectromotive force and electrical conductivity) of porous silicon carbide ceramics are evaluated. Porous silicon carbide ceramics are made from rice hull by reacting silica and carbon, both of which are included in rice hull, using hotpressing method[1].When nitrogen gas is used as enviromental gas for hotpressing, this material becomes n-type semiconductor. It shows comparably high themoelectromotive force. Thermoelectric properties of this material change with the processing conditions.The relationship between thermoelectric properties and microstructure is also evaluated.

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