Spatial-dependent Quantum Dot-photon Entanglement via Tunneling Effect

Utilizing the vortex beams, we investigate the entanglement between the triple-quantum dot molecule and its spontaneous emission field. We present the spatially dependent quantum dot-photon entanglement created by Laguerre-Gaussian (LG) fields. The degree of position-dependent entanglement (DEM) is controlled by the angular momentum of the LG light and the quantum tunneling effect created by the gate voltage. Various spatial-dependent entanglement distribution is reached just by the magnitude and the sign of the orbital angular momentum (OAM) of the optical vortex beam.

DFT Calculations for the HONO Elimination Process of CL-20 Conformers

The HONO elimination process is regarded to be an important initial decomposition process of energetic nitramines. Four CL-20 conformers based on the ε-CL-20 were obtained by the optimization at the m062x/cc-pvtz level in this study, and the Transition State (TS) and Intrinsic Reaction Coordinate (IRC) calculations were carried out at the same level. In addition, the rate coefficients and activation energy of the HONO elimination process were evaluated using conventional transition state theory (TST) and canonical variational transition state theory (CVT) with Eckart and small-curvature tunneling (SCT) methods to correct the transmission coefficients for the quantum tunneling effect. The calculation results have shown that the HONO elimination process concerning the nitro groups located on six numbered rings is the hardest to happen, and it seems that the longer distance between nitro groups and the adjacent hydrogen atom would result in the higher barrier energy; the HONO elimination process is most likely to happen for the axial positioning of nitro groups located on five numbered rings and most unlikely to happen for the ones located on six numbered rings; CL-20 II and CL-20 IV conformers are the most unstable one and most stable one concerning the reaction difficulty of the HONO elimination process.

Acoustic Tunneling Study for Hexachiral Phononic Crystals Based on Dirac-Cone Dispersion Properties

Acoustic tunneling is an essential property for phononic crystals in a Dirac-cone state. By analyzing the linear dispersion relations for the accidental degeneracy of Bloch eigenstates, the influence of geometric parameters on opening the Dirac-cone state and the directional band gaps’ widths are investigated. For two-dimensional hexachiral phononic crystals, for example, the four-fold accidental degenerate Dirac point emerges at the center of the irreducible Brillouin zone (IBZ). The Dirac cone properties and the band structure inversion problem are discussed. Finally, to verify acoustic transmission properties near the double-Dirac-cone frequency region, the numerical calculation of the finite-width phononic crystal structure is carried out, and the acoustic transmission tunneling effect is proved. The results enrich and expand the manipulating method in the topological insulator problem for hexachiral phononic crystals.

Modeling the Effective Conductive Properties of Polymer Nanocomposites with a Random Arrangement of Graphene Oxide Particles

Сomposite materials are widely used in various industrial sectors, for example, in the aviation, marine and automotive industries, civil engineering and others. Methods based on measuring the electrical conductivity of a composite material have been actively developed to detect internal damage in polymer composite materials, such as matrix cracking, delamination, and other types of defects, which make it possible to monitor a composite’s state during its entire service life. Polymers are often used as matrices in composite materials. However, almost always pure polymers are dielectrics. The addition of nanofillers, such as graphene and its derivatives, has been successfully used to create conductive composites based on insulating polymers. The final properties of nanomodified composites can be influenced by many factors, including the type and intrinsic properties of nanoscale objects, their dispersion in the polymer matrix, and interphase interactions. The work deals with modeling of effective electric conductive properties of the representative volume elements of nanoscale composites based on a polymer matrix with graphene oxide particles distributed in it. In particular, methods for evaluating effective, electrically conductive properties have been studied, finite element modelling of representative volumes of polymer matrices with graphene oxide particles have been performed, and the influence of the tunneling effect and the orientation of inclusions on the conductive properties of materials have been investigated. The possibility of using models of resistive strain gauges operating on the principle of the tunneling effect is studied. Based on the finite-element modeling and graph theory tools, we created approaches for estimating changes in the conductive properties of the representative volume elements of a nanomodified matrix subjected to mechanical loading.

Investigation of Focused Ion and Electron Beam Platinum Carbon Nano-Tips with Transmission Electron Microscopy for Quantum Tunneling Vacuum Gap Applications

To realize quantum tunneling applications with movable electrodes, sharp tips with radii down to several tens of nanometers are necessary. The use of a focused ion beam (FIB) and focused electron beam (FEB) with a gas injection system (GIS) allows the integration of geometries in the nanoscale directly into micro and nano systems. However, the implementation of the tunneling effect clearly depends on the material. In this work, a metal-organic precursor is used. The investigation of the prepared tunneling electrodes enables an insight into FIB/FEB parameters for the realization of quantum tunneling applications. For this purpose, a high-resolution transmission electron microscopy (HRTEM) analysis is performed. The results show a dependence of the material nanostructure regarding platinum (Pt) grain size and distribution in an amorphous carbon matrix from the used beam and the FIB currents. The integration of the tips into a polysilicon (PolySi) beam and measuring the current signal by approaching the tips show significant differences in the results. Moreover, the approach of FEB tips shows a non-contact behavior even when the tips are squeezed together. The contact behavior depends on the grain size, proportion of platinum, and the amount of amorphous carbon in the microstructure, especially at the edge area of the tips. This study shows significant differences in the nanostructure between FIB and FEB tips, particularly for the FIB tips: The higher the ion current, the greater the platinum content, the finer the grain size, and the higher the probability of a tunneling current by approaching the tips.

Ultrathin and Simple Frequency Selective Rasorber Based on Ferrite Absorber with Embedded Epsilon-Near-Zero Tunneling Channels

An ultrathin and simple frequency-selective rasorber (FSR) with a passband located within a wide absorption band is proposed. The ultrawide absorption band is obtained by employing commercial magnetic materials in the absorption channel and the passband is realized using epsilon-near-zero (ENZ) tunneling waveguides. The attractively ultrathin and simple feature is achieved by utilizing tunneling effect at the cutoff frequency of metallic waveguides with arbitrary length, permitting the overall thickness shrink into to the same as that of the absorber.

Ultrathin and Simple Frequency Selective Rasorber Based on Ferrite Absorber with Embedded Epsilon-Near-Zero Tunneling Channels

An ultrathin and simple frequency-selective rasorber (FSR) with a passband located within a wide absorption band is proposed. The ultrawide absorption band is obtained by employing commercial magnetic materials in the absorption channel and the passband is realized using epsilon-near-zero (ENZ) tunneling waveguides. The attractively ultrathin and simple feature is achieved by utilizing tunneling effect at the cutoff frequency of metallic waveguides with arbitrary length, permitting the overall thickness shrink into to the same as that of the absorber.

High-performance HgCdTe avalanche photodetector enabled with suppression of band-to-band tunneling effect in mid-wavelength infrared

HgCdTe avalanche photodiodes promise various fascinating applications due to the outstanding capability of detecting weak signals or even single photon. However, the underlying transport mechanisms of diverse dark current components are still unresolved at high reverse bias, thus limiting the development of high-performance devices. Here, we establish an accurate model to demonstrate the competitive mechanism between band-to-band and avalanche dark currents in positive-intrinsic-negative structures. Based on the high consistency between the simulated and measured results, we find that both components jointly dominate overall dark current but with a larger avalanche current. This breaks the conventional cognition that band-to-band dark current contributes the majority. With the guidance, we reconstruct an optimized device and achieve gain 1876 (6153) and dark current 10−10 (10−9) A at bias −10 (−10.5) V, respectively. Comparisons of dark current and gain with reported single-element devices further confirm the outstanding performance of our device.

Theoretical limit of how small we can make MoS2 transistor channels

As the size of electronic devices is reduced below 3 nanometers, contact resistance and tunnel leakage current have become crucial factors affecting device performance. The 2D material MoS2 is a potential semiconductor to substitute conventional silicon. In this work, the density functional theory combined with the non-equilibrium Green's function was used to simulate the transport properties of 2H semiconductor phase MoS2 connected to 1T metal phase MoS2 lead. It is found that when the channel length is greater than or equal to 2.736nm, the leakage current can be negligible, marking this length as miniaturization limit for a conventional transistor or diodes. When the channel length is smaller than 2.736nm, the transport are dominated by the direct tunneling. The junctions can be used to design the devices based on the tunneling effect.

Novel features of electromagnetic waves in an isotropic degenerate electron-ion plasma

Within the framework of kinetic theory, the nonlinear interaction of electromagnetic waves (EMWs) with a degenerate electron-ion plasma is studied to account for the electron quantum mechanical effects. For this purpose, a specific quantum regime is considered, for which the degenerate electron Fermi velocity is assumed to be taken of the order of group velocity of EMWs. This eventually leads to the existence of nonlinear Landau damping rate for the EMWs in the presence of electron Ponderomotive force. The electrons-ion density oscillations may be arisen from the nonlinear interaction of EMWs, leading to a new type of nonlinear Schrödinger equation in terms of a complex amplitude for electromagnetic pump wave. The profiles of nonlinear damping rate reveal that EMWs become less damped for increasing the quantum tunnelling effects. The electrostatic response for the linear electrostatic waves is also investigated and derived a linear dispersion for the ion-acoustic damping rate. The latter is a direct function of electron Fermi speed and does not rely on the Bohm tunneling effect. The obtained results are numerically analyzed for the two microwaves of different harmonics in the context of nonrelativistic astrophysical dense plasma environments, e.g., white dwarfs, where the electron quantum corrections cannot be ignored.