Growth rate and composition of InGaN during InGaN/GaN quantum wells selective area metal-organic vapor phase epitaxy considering surface diffusion

2013 ◽  
Vol 19 (5) ◽  
pp. 1747-1751 ◽  
Author(s):  
Byung Moon So ◽  
Suk Bum Youn ◽  
Ik-Tae Im
2007 ◽  
Vol 46 (No. 43) ◽  
pp. L1045-L1047 ◽  
Author(s):  
Tomonari Shioda ◽  
Yuki Tomita ◽  
Masakazu Sugiyama ◽  
Yukihiro Shimogaki ◽  
Yoshiaki Nakano

2008 ◽  
Vol 1 ◽  
pp. 071102 ◽  
Author(s):  
Tomonari Shioda ◽  
Masakazu Sugiyama ◽  
Yukihiro Shimogaki ◽  
Yoshiaki Nakano

ACS Photonics ◽  
2018 ◽  
Vol 5 (11) ◽  
pp. 4330-4337 ◽  
Author(s):  
Akanksha Kapoor ◽  
Nan Guan ◽  
Martin Vallo ◽  
Agnes Messanvi ◽  
Lorenzo Mancini ◽  
...  

1999 ◽  
Vol 38 (Part 1, No. 3A) ◽  
pp. 1516-1520 ◽  
Author(s):  
Shingo Hirose ◽  
Akihiro Yoshida ◽  
Masaaki Yamaura ◽  
Kazuhiko Hara ◽  
Hiro Munekata

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