Growth rate and composition of InGaN during InGaN/GaN quantum wells selective area metal-organic vapor phase epitaxy considering surface diffusion
2013 ◽
Vol 19
(5)
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pp. 1747-1751
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2007 ◽
Vol 298
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pp. 37-40
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2007 ◽
Vol 46
(No. 43)
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pp. L1045-L1047
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1999 ◽
Vol 38
(Part 1, No. 3A)
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pp. 1516-1520
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