Effect of low-temperature interlayer in active-region upon photoluminescence in multiple-quantum-well InGaN/GaN

2022 ◽  
pp. 118741
Author(s):  
Rui Li ◽  
Chengxin Wang ◽  
Kaiju Shi ◽  
Changfu Li ◽  
Shangda Qu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Active Region ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum

scholarly journals Light-biased IV characteristics of a GaAsBi/GaAs multiple quantum well pin diode at low temperature

2018 ◽  
Vol 33 (9) ◽  
pp. 094008
Author(s):  
R D Richards ◽  
T B O Rockett ◽  
M R M Nawawi ◽  
F Harun ◽  
A Mellor ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Pin Diode ◽  
Multiple Quantum

Dependence of the photovoltaic performance of pseudomorphic InGaN/GaN multiple-quantum-well solar cells on the active region thickness

2016 ◽  
Vol 108 (16) ◽  
pp. 161907 ◽  
Author(s):  
Anna Mukhtarova ◽  
Sirona Valdueza-Felip ◽  
Luca Redaelli ◽  
Christophe Durand ◽  
Catherine Bougerol ◽  
...  
Keyword(s):  
Solar Cells ◽  
Active Region ◽  
Quantum Well ◽  
Photovoltaic Performance ◽  
Multiple Quantum Well ◽  
Multiple Quantum

Green laser diodes with constant temperature growth of InGaN/GaN multiple quantum well active region

2019 ◽  
Vol 12 (6) ◽  
pp. 064007 ◽  
Author(s):  
Aiqin Tian ◽  
Jianping Liu ◽  
Renlin Zhou ◽  
Liqun Zhang ◽  
Siyi Huang ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Constant Temperature ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Green Laser ◽  
Multiple Quantum ◽  
Temperature Growth
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